Impact of Defect‐Induced Strain on Device Properties

Reiche, M.; Kittler, M.; Pippel, Eckhard; Uebensee, Hartmut; Kosina, H.; Grill, Alexander; Stanojević, Z.; Baumgärtner, O.

doi:10.1002/adem.201600736

Cited by 3 publications

(1 citation statement)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[30] Quantum mechanical device simulations support the effect of strain-induced bandgap narrowing on the carrier transport along the dislocations in silicon and the resulting interpretation of dislocations as quantum wires. [31] For simulations using the Global TCAD Solutions (GTC) Framework simulation package, [32] a 2D model of a nMOSFET with circular geometry was applied (Figure 5). A dislocation (core) in the center was embedded in an unstrained matrix and surrounded by a thin gate oxide and the gate electrode.…”

Section: Simulationmentioning

confidence: 99%

Transport of Charge Carriers along Dislocations in Si and Ge

Kittler

Reiche

Schwartz

et al. 2019

Physica Status Solidi (a)

Self Cite

View full text Add to dashboard Cite

Experimental observations and quantum mechanical device simulations point to different electronic properties of dislocations in silicon and germanium. The experimental data suggest a supermetallic behavior of the dislocations in Si and thus the high strain in the dislocation core is thought to cause the confinement of the charge carriers, which leads to the formation of a 1D electron gas along a dislocation (quantum wire). The resulting significant increase in the electron concentration corresponds to a marked increase in the drain current of metal–oxide–semiconductor field‐effect transistor (MOSFET). The specific resistance of an individual dislocation in Ge is about nine orders of magnitude higher than for a dislocation in Si. The experimental measurements of the strain in dislocation cores in Ge are still missing. Based on the band structure data, the generation of a strain equivalent to that of the dislocation cores in Si appears to be very challenging because of the transition from an indirect into a direct semiconductor with about tenfold lower strain levels. The lower strain in the dislocation core in germanium may not support the carrier confinement as proposed for the dislocation core of silicon, and consequently 1D electron gases are not expected to form along the dislocations in Ge.

show abstract

Section: Simulationmentioning

confidence: 99%