Impact of Cu–Au type domains in high current density CuInS 2 solar cells

CuInS2‐Cu2ZnSnS4 crystals were synthesized by the pressure‐less sintering method using CuInS2 and Cu2ZnSnS4 powders grown from each melt. The x values in Cu2(2In)x(ZnSn)(1.00−x)S4 were evaluated by energy dispersive spectroscopy. Lattice constants were derived from powder X‐ray diffraction analysis by Rietveld method. Lattice constants of CuInS2 phase changed linearly at x ≥ 0.49. On the other hand, lattice constants of Cu2ZnSnS4 phase changed almost linearly at x ≤ 0.37. In Raman spectra, peak positions of A (Itrue4¯) or A1 (Itrue4¯2m) mode of Cu2ZnSnS4 phase changed toward the lower wavenumber side linearly with increasing x. A1 mode of CuInS2 phase became weaker with decreasing x, and disappeared below x = 0.49. In PL spectra measured at 15 K, broad peaks at about 1.26 eV were observed at 0.00 ≤ x ≤ 0.85.

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“…The dominant peak at 294.4 cm −1 in the spectrum of x = 1.00 can be assigned to A 1 (

I \overset{4}{true} 2 d

) mode of CuInS 2 phase . Peaks at 243.5 and 339.8 cm −1 are almost consistent with the reported values of CuInS 2 .…”

Section: Resultssupporting

confidence: 80%

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals

Oishi¹,

Shimizu²,

Takeuchi³

et al. 2017

Physica Status Solidi (b)

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“…The 195 cm −1 contribution can possibly be attributed to the Cu–Au Cu(In,Ga)Se 2 structure (space group

P \overset{true¯}{4M} 2

), showing similitudes with the very copper‐poor CuInS 2 case. [ 21 ] This would however be, to our knowledge, the first time that such phase is reported in Ga‐rich CIGSe samples, and caution should thus be exercised.…”

Section: Resultsmentioning

confidence: 83%

Over 10% Efficient Wide Bandgap CIGSe Solar Cells on Transparent Substrate with Na Predeposition Treatment

et al. 2020

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With the recent rise of new photovoltaic applications, it has become necessary to develop specific optoelectronic properties for thin‐film technologies such as Cu(In,Ga)Se2 and to take advantage of their high degree of tunability. The feasibility of efficient wide bandgap absorbers on transparent conductive oxide substrates is, in that context, of critical importance. Using an original approach based on a predeposition sodium treatment, Cu(In,Ga)Se2 absorbers fabricated by sputtering and reactive annealing with a Ga to (Ga + In) content over 0.7 and an optical bandgap above 1.4 eV are deposited on transparent fluorine‐doped tin oxide films, with the insertion of an ultrathin MoSe2 layer preserving the contact's ohmicity. Different material characterizations are carried out, and a thorough Raman analysis of the absorber reveals that the sodium pretreatment significantly enhances the Ga incorporation into the chalcopyrite matrix, along with markedly improving the film's morphology and crystalline quality. This translates to a spectacular boost of the photovoltaic performance for the resulting solar cell as compared with a reference device without Na, specifically in the voltage and fill factor. Eventually, an efficiency exceeding 10% is obtained without antireflection coating, a record value bridging the gap with the state of the art on nontransparent substrates.

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“…In thin film photovoltaics, a rigorous control of the optoelectronic properties of the growing layers is of major importance in terms for good reproducibility and homogeneity. We have shown in previous works that advanced Raman spectroscopy can assess relevant properties in photovoltaic materials such as film thickness24, crystal structure25, defect densities26, composition272829 and how it can be used as a versatile and fast tool for quality control and process monitoring24.…”

mentioning

confidence: 99%

Advanced Raman Spectroscopy of Methylammonium Lead Iodide: Development of a Non-destructive Characterisation Methodology

Pistor

Ruiz

Cabot

et al. 2016

Sci Rep

116

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In recent years, there has been an impressively fast technological progress in the development of highly efficient lead halide perovskite solar cells. However, the stability of perovskite films and respective solar cells is still an open point of concern and calls for advanced characterization methods. In this work, we identify appropriate measurement conditions for a meaningful analysis of spin-coated absorber-grade perovskite thin films based on methylammonium (MA) lead iodide (MAPbI3) by Raman spectroscopy. The material under investigation and its derivates is the most commonly used for high efficiency devices in the literatures and has yielded working solar cell devices with efficiencies around 10% in our laboratory. We report highly detailed Raman spectra obtained with excitation at 532 nm and 633 nm and their deconvolution taking advantage of the simultaneous fitting of spectra obtained with varying excitation wavelengths. Finally, we propose a fast and contactless methodology based on Raman to probe composition variations and/or degradation of these perovskite thin films and discuss the potential of the presented technique as quality control and degradation monitoring tool in other organic-inorganic perovskite materials and complete solar cell devices.

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Impact of Cu–Au type domains in high current density CuInS 2 solar cells

Cited by 15 publications

References 36 publications

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals

Over 10% Efficient Wide Bandgap CIGSe Solar Cells on Transparent Substrate with Na Predeposition Treatment

Advanced Raman Spectroscopy of Methylammonium Lead Iodide: Development of a Non-destructive Characterisation Methodology

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Impact of Cu–Au type domains in high current density CuInS 2 solar cells

Cited by 15 publications

References 36 publications

Crystallographic and optical properties of CuInS2‐Cu2ZnSnS4 crystals

Crystallographic and optical properties of CuInS2‐Cu2ZnSnS4 crystals

Over 10% Efficient Wide Bandgap CIGSe Solar Cells on Transparent Substrate with Na Predeposition Treatment

Advanced Raman Spectroscopy of Methylammonium Lead Iodide: Development of a Non-destructive Characterisation Methodology

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Product

Resources

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Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals

Crystallographic and optical properties of CuInS₂‐Cu₂ZnSnS₄ crystals