Impact of Control-Gate and Floating-Gate Design on the Electron-Injection Spread of Decananometer nand Flash Memories

Compagnoni, Christian Monzio; Miccoli, Carmine; Lacaita, A.L.; Marmiroli, A.; Spinelli, A.S.; Visconti, A.

doi:10.1109/led.2010.2066253

Cited by 11 publications

(5 citation statements)

References 7 publications

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“…8. This latter parameter was extracted from measurements of the electron injection spread during incremental step pulse programming [27]- [29] and, therefore, does not represent an additional fitting parameter in our model. Fig.…”

Section: B Further Validationsmentioning

confidence: 99%

Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part II: On-Field Operation and Distributed-Cycling Effects

Paolucci

Compagnoni

Miccoli

et al. 2014

IEEE Trans. Electron Devices

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I. INTRODUCTIONO N-FIELD operation of Flash memory arrays typically involves arbitrary time sequences of program/erase (P/E) cycles and idle periods, with the possibility for temperature to change within a wide range of values. The high electrical stress determined by P/E cycles on the cell tunnel oxide gives rise to charge trapping therein, impacting the array P/E performance [2]-[9] and determining threshold-voltage (V T ) instabilities when cells should instead keep their V T level, i.e., their datum, in time [7], [10]-[15]. V T instabilities come from Manuscript

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Section: B Further Validationsmentioning

confidence: 99%

Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part II: On-Field Operation and Distributed-Cycling Effects

Paolucci

Compagnoni

Miccoli

et al. 2014

IEEE Trans. Electron Devices

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“…2a shows that a relevant statistical variability of the V T per pulse still exists. This variability is the result, first of all, of the statistical nature of the process leading to electron injection into the floating gate during each ISPP pulse (program noise) [14]- [16], [19] and, in addition, of fluctuations of V T due to read noise, mainly in the form of RTN and gaussian noise from the sensing circuitry (note that the read noise contribution to V T is the main reason for the negative tail appearing in Fig. 2a).…”

Section: A Single Readmentioning

confidence: 99%

First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

Compagnoni

Paolucci

Miccoli

et al. 2015

IEEE Electron Device Lett.

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HE miniaturization of cell dimensions following the uninterrupted scaling of the Flash technology since its introduction in the 80's [1], [2] has largely increased the impact that single electrons in the gate stack have on device threshold voltage (V T ) [3]. This, first, opened the possibility to clearly detect the capture and release of single electrons in the cell tunnel-oxide giving rise to random telegraph noise (RTN) [4]-[7] and post-cycling charge detrapping [8]-[10]. The closest proximity of electrons in the tunnel oxide to the channel surface along with their localized nature in the presence of a percolative source-to-drain current conduction [11],[12] allowed, in fact, to easily identify cells in the array where a very high V T shift ( V T ) occurs after a single capture/release event. This was not possible, instead, for electrons stored in the cell floating gate, as the farther and well-defined distance of the electronic charge from the channel surface and, more important, its uniform distribution over the channel area in this case preclude any significant statistical boosting of the V T arising from single electrons.

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“…[8][9][10][11][12][13][14][15] Especially, for NAND Flash scaling, V T distribution spread is one of the key challenges to overcome. [16][17][18][19][20][21] Moreover, hydrogen has dramatic and complex effects on the electrical characteristics of silicon-based devices. For instance, hydrogen can passivate the electrical activity of dangling bonds in the Si/SiO 2 interface.…”

Section: Introductionmentioning

confidence: 99%

The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories

Chiu¹,

Lin²,

Yang³

et al. 2019

Jpn. J. Appl. Phys.

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This paper, for the first time, presents a comprehensive study into the effect of hydrogen concentration in the forming gas on the reliability of NAND Flash memories. It is newly observed that a higher hydrogen concentration leads to broaden the threshold-voltage (VT) distribution after programming. This suggests that a higher hydrogen concentration makes a larger amount of ionized hydrogens (H+) exist in the shallow trench isolation (STI), which results in the fluctuation of the Fowler–Nordheim tunneling current during programming. It is also found that the VT distribution width difference between higher and lower hydrogen concentration turns out to be smaller after the program/erase cycling. This could be explained by the neutralization of H+ due to the capture of the tunneling electrons at the STI edge. On the other hand, the higher hydrogen concentration proves to be able to provide better retention characteristics. Thus, the programming and retention characteristics are the tradeoff relationship. Therefore, optimization of the hydrogen concentration is crucial for the NAND Flash process integration.

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Impact of Control-Gate and Floating-Gate Design on the Electron-Injection Spread of Decananometer nand Flash Memories

Cited by 11 publications

References 7 publications

Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part II: On-Field Operation and Distributed-Cycling Effects

Revisiting Charge Trapping/Detrapping in Flash Memories From a Discrete and Statistical Standpoint—Part II: On-Field Operation and Distributed-Cycling Effects

First Detection of Single-Electron Charging of the Floating Gate of NAND Flash Memory Cells

The effect of hydrogen on programmed threshold-voltage distribution in NAND flash memories

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