Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Wang, Xiaolei; Sun, Xiaoqing; Zhang, Yuanyuan; Zhou, Lixing; Xiang, Jinjuan; Ma, Xueli; Yang, Hong; Li, Yongliang; Han, Kai; Luo, Jun; Zhao, Chao; Wang, Wenwu

doi:10.1109/ted.2020.3017569

Cited by 22 publications

(9 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The presence of traps at the FE/DE interface modifies Edep because in this case part of the polarization charge is screened by trapped charges and not only by the dielectric capacitor. Accordingly, the generalized Edep expression in the case with interface traps reads [48], [49] |𝐸…”

Section: A Depolarization Fieldmentioning

confidence: 99%

See 1 more Smart Citation

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

2023

View full text Add to dashboard Cite

Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received much attention due to their technological potential in terms of scalability, high-speed, and lowpower operation. Unfortunately, however, HfO2-FeFETs also suffer from persistent reliability challenges, specifically affecting retention, endurance, and variability. There is a broad consensus that a deep understanding of the reliability physics of HfO2-FeFETs is an essential prerequisite for the successful commercialization of this promising technology. In this paper, we review the current understanding of the relevant reliability aspects of HfO2-FeFETs. We initially focus on the reliability physics of ferroelectric capacitors, as a prelude to a comprehensive analysis of FeFET reliability. Then, we interpret key reliability metrics of the FeFET at device-level (i.e., retention, endurance, variability) based on the physical mechanisms previously identified. Our integrative theoretical framework connects apparently unrelated reliability issues and suggests mitigation strategies at either device, circuit, and system level. We conclude the paper by proposing a set of research opportunities to guide future development in this field.

show abstract

Section: A Depolarization Fieldmentioning

confidence: 99%

“…Eq. ( 2) reveals that Edep is effectively tuned by QIT and that its sign can be reverted conveniently thus improving retention [48].…”

Section: A Depolarization Fieldmentioning

confidence: 99%

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

2023

View full text Add to dashboard Cite

show abstract

“…In addition to the influence of CTE mismatch, IL formation is a crucial factor that may influence P r in Hf 0.5 Zr 0.5 O 2 [116]. During film deposition or subsequent annealing, IL can induce an imperfect compensation of polarization, resulting in E dep [103,138]. Particularly if the ferroelectric Hf 0.5 Zr 0.5 O 2 layer attains the atomic level, the strong E dep could significantly reduce P r .…”

Section: Reports On Ultra-thin Filmsmentioning

confidence: 99%

A perspective on the physical scaling down of hafnia-based ferroelectrics

et al. 2023

View full text Add to dashboard Cite

HfO2-based ferroelectric thin films have attracted significant interest for semiconductor device applications due to their compatibility with complementary metal oxide semiconductor (CMOS) technology. One of the benefits of HfO2 based ferroelectric thin films is their ability to be scaled to thicknesses as low as 10 nm while retaining their ferroelectric properties; a feat that has been difficult to accomplish with conventional perovskite-based ferroelectrics using CMOS-compatible processes. However, reducing the thickness limit of HfO2-based ferroelectric thin films below the sub-5-nm thickness regime while preserving their ferroelectric property remains a formidable challenge. This is because both the structural factors of HfO2, including polymorphism and orientation, and the electrical factors of HfO2-based devices, such as the depolarization field, are known to be highly dependent on the HfO2 thickness. Accordingly, when the thickness of HfO2 drops below 5 nm, these factors will become even more crucial. In this regard, the size effect of HfO2-based ferroelectric thin films is thoroughly discussed in the present review. The impact of thickness on the ferroelectric property of HfO2-based thin films and the electrical performance of HfO2-based ferroelectric semiconductor devices, such as ferroelectric random access memory, ferroelectric field-effect-transistor, and ferroelectric tunnel junction, is extensively discussed from the perspective of fundamental theory and experimental results. Finally, recent developments and reports on achieving ferroelectric HfO2 at sub-5 nm thickness regime and their applications are discussed.

show abstract

“…6(b). In the case of MFIS-FeFETs (and similarly MFMIS-FeFETs), the interface charges at the ferroelectric/interlayer interface modify Gauss' law to [22]…”

Section: B Interface Chargesmentioning

confidence: 99%

Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

Toprasertpong

Takenaka

Takagi

2022

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

A memory window of ferroelectric field-effect transistors (FeFETs), defined as a separation of the HIGHstate and the LOW-state threshold voltages, is an important measure of the FeFET memory characteristics. In this study, we theoretically investigate the relation between the FeFET memory window and the P-E hysteresis loop of the ferroelectric gate insulator, and derive a compact model explicitly described by material parameters. It is found that the memory window is linearly proportional to the ferroelectric polarization for the small polarization regime, and converges to the limit value of 2×coercive field× thickness when the remanent polarization is much larger than permittivity×coercive field. We discuss additional factors that possibly influence the memory window in actual devices such as the existence of interlayer (no direct impact), interface charges (invalidity of linear superposition between the ferroelectric and charge-trapping hysteresis), and minor-loop operation (behavior equivalent to the generation of interface charges).

show abstract

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Cited by 22 publications

References 40 publications

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

A perspective on the physical scaling down of hafnia-based ferroelectrics

Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

Contact Info

Product

Resources

About

Impact of Charges at Ferroelectric/Interlayer Interface on Depolarization Field of Ferroelectric FET With Metal/Ferroelectric/Interlayer/Si Gate-Stack

Cited by 22 publications

References 40 publications

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

A perspective on the physical scaling down of hafnia-based ferroelectrics

Memory Window in Ferroelectric Field-Effect Transistors: Analytical Approach

Contact Info

Product

Resources

About

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges

Reliability of HfO₂-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges