Impact of CdTe thin film thickness in ZnxCd1−xS/CdTe solar cell by RF sputtering

Hossain, Shabbir; Rahman, Kazi Sajedur; Karim, Mohammad Rezaul; Aijaz, Muhammad Omer; Dar, Mushtaq Ahmad; Shar, Muhammad Ali; Misran, Halina; Amin, Nowshad

doi:10.1016/j.solener.2019.01.019

Cited by 38 publications

(12 citation statements)

References 36 publications

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“…The II-VI semiconductor compound thin films have been investigated for many years because of the multiple applications of these materials, in the field of solar cells, photocatalysts, field-effect transistors, light-emitting devices, and optoelectronic devices [1][2][3][4][5][6][7][8][9][10]. As buffer layer in solar cell, II-VI compounds, such as CdS [7,[11][12][13], ZnS [9,14,15], CdZnS [16][17][18][19][20], CdSe [21,22], CdSSe [23], etc., have been usually used. This binary/ternary compound thin film is reported to be synthesized by various techniques such as molecular beam epitaxy (MBE) [24], chemical bath deposition [5,15,25,26], sputtering [9,10,14,27,28], atomic layer deposition [29], etc.…”

Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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The ZnS thin films have been deposited by radio frequency magnetron sputtering at room temperature. Post-deposition rapid thermal annealing treatment was done for the films deposited at different powers ranging from 70 to 100 W. One peak is observed for as-deposited and annealed thin films at around 28.48° corresponding to the (111) reflection plane indicating a zincblende structure. The overall intensity of the peaks and the FWHM values of as-deposited films increased after annealing corresponding to the increase in crystallinity. The optical energy bandgap is found in the range of 3.24-3.32 eV. With increasing annealing temperature, the decrease in the Urbach energy values indicating a decrease in localized states which is in good agreement with the XRD results where the crystallinity increased. The surface morphology of the films seems to be composed of Nano-granules with a compact arrangement. Apparently, the grain size increases in the deposited films as annealing temperature increases. The compositional ratio attained close to the stoichiometric ratio of 1:1 after annealing. From the Hall effect measurement, the carrier concentration and mobility are found to increase after annealing. The high carrier concentration and mobility also comply with structural and optical analysis. Best results are found for the film annealed at 400 °C deposited at 90 W.

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Section: Introductionmentioning

confidence: 99%

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

et al. 2019

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“…It also works for the CdTe layer crystallinity and it felicitates the creation of broad energy bandgap ternary crystal layers near the interface of CdS-CdTe [161][162][163]. To enhance the performance of CdTe solar cells, there should be Thus, it helps to circumvent the losses in window absorption and the lattice mismatch in a solar absorber layer [164,165]. The incorporation of Zn into CdS helps to improve the material's diffusion length and resistivity offering an optical window for an efficient heterojunction structure production [161].…”

Section: Enhancement Of the Window Layer Propertymentioning

confidence: 99%

Opto-Electronics Review

Lilhare,

Khare

2020

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The solar photovoltaic technology is one of the renewable technologies with the potential to shape a future-proof, reliable, scalable and affordable electricity system. It is important to provide better resources for any upcoming technology. CdS/CdTe thin films have long been considered as one enticing option for reliable and cost-effective solar cells to be developed. N-type CdS as a transparent window layer in heterojunction structures is one of the best choices for CdTe cells. In a solar cell structure, window layer material plays a very crucial role to improve its performance. For this reason, this review focuses on the basic and significant aspects such as importance of the window layer thickness, degradation effect, use of nano-wire arrays, and an ammonia-free process to deposit the window layer. Also, an attempt has been made to analyze various processes improving window layer properties. Necessary discussions have been included to review the impact of solar cell parameters on the above aspects. It is anticipated that this review article will fulfill the requirement of knowledge to be used in the fabrication of CdS/CdTe solar cells.

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Section: Introductionmentioning

confidence: 99%

“…Only a few micrometers of a CdTe thin film can effectively absorb sunlight, 20 and thus, reduce the weight of the device. These devices can be easily manufactured by physical vapor deposition (PVD), 21 closespace sublimation, 22 magnetron sputtering, 23 and vapor transport deposition. 24 Polycrystalline thin-film solar cells based on CdTe are one of the leading candidates that exhibit a significantly low radiation damage, 25,26 and feature constituent elements with relatively high atomic numbers.…”

mentioning

confidence: 99%

Electron‐radiation effect on Freon‐gas‐treated CdTe solar cells

Kim

Song

Kim

et al. 2022

Intl J of Energy Research

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Summary In this study, CdTe solar cells were fabricated, with 12%‐13% efficiencies, using CdCl2 dipping and Freon gas treatments and irradiated with a 6‐MeV electron beam of various fluences. The efficiency of the CdCl2‐dipped samples decreased by approximately 61% at a dose of 1 × 1016 e/cm2, while that of the Freon‐gas‐treated samples was reduced by only 43%. The measured external quantum efficiencies indicated that the short‐circuit current density (Jsc) values of the treated devices differed significantly under the electron‐beam irradiation. The Jsc of the CdCl2‐dipped samples decreased from 23.5 to 10.8 mA/cm2, while that of the Freon‐gas‐treated samples decreased from 24.7 to 16.4 mA/cm2. The drift mobility values, derived through time‐of‐flight measurements, decreased by approximately 1000 times in the CdCl2‐dipped device and by ~100 times in the Freon‐gas‐treated device at a dose of 1 × 1016 e/cm2. These results reveal that in electron‐beam‐irradiated devices, the treatment method influences the reduction in Jsc.

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Impact of CdTe thin film thickness in ZnxCd1−xS/CdTe solar cell by RF sputtering

Cited by 38 publications

References 36 publications

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Effect of rapid thermal annealing on structural and optical properties of ZnS thin films fabricated by RF magnetron sputtering technique

Opto-Electronics Review

Electron‐radiation effect on Freon‐gas‐treated CdTe solar cells

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