Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005.
DOI: 10.1109/bipol.2005.1555236
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Impact of bum-in effect and base strain on low frequency noise in InGaAsN HBTs

Hua Yang
1
,
Guofu Niu
2
,
P.J. Zampardi3
et al.

Abstract: We present the first systematic experimental investigation of low frequency noise in InGaAsN Heterojunction Bipolar Transistors (HBTs). The low frequency noise is examined as a function of base current for InGaAsN HBTs featuring different base strain and bum-in effects.

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