Impact of bulk traps in GaN buffer on the gate-lag transient characteristics of AlGaN/GaN HEMTs

Zhou, Xingye; Feng, Zhihong; Wang, Li; Wang, Yuangang; Dun, Shaobo; Cai, Shujun

doi:10.1016/j.sse.2014.06.040

Cited by 22 publications

(10 citation statements)

References 13 publications

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“…However, since the negative polarization charge at the interface of AIGaN barrier/GaN cap layer is included in our simulation, surface trapping effect will not man ifest itself according to the virtual gate theory. Therefore, the current collapses mainly result from the bulk acceptor traps [15]. Moreover, an interesting phenomenon is found from Fig.…”

Section: Resultsmentioning

confidence: 76%

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Zhou

Feng

Wang

et al. 2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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In order to investigate the current collapse of AIGaN/GaN high-electron-mobility transistor (HEMT) due to trapping effects, the two-dimensional (2-D) transient simu lations were carried out and analyzed in this paper, taking into account the coupling effect of traps and thermal effect. Both the gate-lag transient current and pulsed I-V curves were reproduced by the simulation. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of AIGaN/GaN HEMTs besides surface traps. Furthermore, thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is helpfu I in analyzing the mechanism of dynamic current co lIapse, and the work in this paper will benefit the model development and reliability study of GaN-based devices.

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Section: Resultsmentioning

confidence: 76%

Transient simulation of AlGaN/GaN HEMT including trapping and thermal effects

Zhou

Feng

Wang

et al. 2014

2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

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“…The carrier generation-recombination models such as SRH recombination statistics, Auger recombination, and radiative recombination model in the direct bandgap materials (GaN and AlGaN) are selected [31]. Note that the studied HEMT device was fabricated on the SiC substrate, and because of its high-thermal conductivity [2,6,7,16,30], the device's self-heating effects are less pronounced at lower bias voltages. From the experiments, the self-heating effects in the I DS -V DS and I DS -V GS properties were found to be minimal up to the drain voltage of V DS ≤ 10 V. In this work, the static I-V and Y-parameter simulations are carried out for V DS ≤ 10 V so that the thermal effects are not considered in the simulations.…”

Section: Simulation Detailsmentioning

confidence: 99%

“…As an effective approach, the DC properties of the HEMT are simulated and validated with the measured data to calibrate the material and physical model parameters [6,7,25,30]. In a mixed mode circuit configuration, the HEMT is represented as a two-port network for admittance (Y)-parameter simulation.…”

Section: Simulation Detailsmentioning

confidence: 99%

“…AlGaN/GaN HEMT technology has already demonstrated their supreme potential for the RF and microwave power applications [1]. However, during the abrupt drain/gate voltage swings, electrically active traps present in the device take a finite time (i.e., characteristic time constant of carrier capture/emission process) to respond to the applied V DS /V GS signal variations, resulting in a delayed drain current (I DS ) switching in the RF and microwave electronics [2][3][4][5][6][7]. This transient and recoverable reduction in I DS is known as RF current collapse.…”

Section: Introductionmentioning

confidence: 99%

“…This transient and recoverable reduction in I DS is known as RF current collapse. The charge trapping and de-trapping phenomena induce microwave output power loss, restrict the maximum achievable power-added efficiency (PAE), and also undermine the transistor reliability [2][3][4][5][6][7]. Hence, the characterization of traps in the HEMT is essential for improving the epilayer crystalline quality.…”

Section: Introductionmentioning

confidence: 99%

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Identification of Buffer and Surface Traps in Fe-Doped AlGaN/GaN HEMTs Using Y21 Frequency Dispersion Properties

et al. 2021

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The buffer and surface trapping effects on low-frequency (LF) Y-parameters of Fe-doped AlGaN/GaN high-electron mobility transistors (HEMTs) are analyzed through experimental and simulation studies. The drain current transient (DCT) characterization is also carried out to complement the trapping investigation. The Y22 and DCT measurements reveal the presence of an electron trap at 0.45–0.5 eV in the HEMT structure. On the other hand, two electron trap states at 0.2 eV and 0.45 eV are identified from the LF Y21 dispersion properties of the same device. The Y-parameter simulations are performed in Sentaurus TCAD in order to detect the spatial location of the traps. As an effective approach, physics-based TCAD models are calibrated by matching the simulated I-V with the measured DC data. The effect of surface donor energy level and trap density on the two-dimensional electron gas (2DEG) density is examined. The validated Y21 simulation results indicate the existence of both acceptor-like traps at EC –0.45 eV in the GaN buffer and surface donor states at EC –0.2 eV in the GaN/nitride interface. Thus, it is shown that LF Y21 characteristics could help in differentiating the defects present in the buffer and surface region, while the DCT and Y22 are mostly sensitive to the buffer traps.

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