Impact of Bi Deficiencies on Ferroelectric Resistive Switching Characteristics Observed at p‐Type Schottky‐Like Pt/Bi_1–δFeO₃ Interfaces

Abstract

films act as a p-type semiconductor. As the Bi deficiency increased, a leakage current at Pt/Bi 1-δ FeO 3 interfaces tended to increase, and finally, rectifying and hysteretic current-voltage (I-V) characteristics were observed. In I-V characteristics measured at a voltage-sweep frequency of 1 kHz, positive and negative current peaks originating from ferroelectric displacement current were observed under forward and reverse bias prior to set and reset switching processes, respectively, suggesting that polarization reversal is involved in the resistive switching effect. The resistive switching measurements in a pulse-voltage mode revealed that the switching speed and switching ratio can be improved by controlling the Bi deficiency. The resistive switching devices showed endurance of >10 5 cycles and data retention of >10 5 s at room temperature. Moreover, unlike conventional resistive switching devices made of metal oxides, no forming process is needed to obtain a stable resistive switching effect in the ferroelectric resistive switching devices. These results demonstrate promising prospects for application of the ferroelectric resistive switching effect at Pt/Bi 1-δ FeO 3 interfaces to nonvolatile memory.by controlling the Bi deficiency. Moreover, the devices showed promising characteristics for use as nonvolatile memories, including stable resistive switching without the need for any forming process, data retention of >10 5 s at room temperature, and endurance of >10 5 cycles.

Successive field-induced transitions in BiFeO3 around room temperature

“…Neutron diffraction measurements clarified that incommensurate spin modulation along [110] Recently, multiferroic materials have been widely investigated due to their coupling between magnetic and ferroelectric ordering. BiFeO 3 is perhaps the most extensively studied multiferroic material as it possesses robust multiferroicity at room temperature as well as various possible applications [1][2][3][4][5][6][7][8][9][10]. The effects of magnetic fields on the coupled multiple degrees of freedom behind these phenomena are not fully understood.…”

Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure

“…Since polarization reversal does not induce a chemical alteration and is an intrinsically fast phenomenon, 1 some novel and significant applications based on ferroelectric polarization have been revealed in recent years. One of the most promising aspects is ferroelectric tunnel junction (FTJ) which consists of an ultrathin ferroelectric material as the insulating barrier sandwiched between two metallic electrodes.…”

Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories

“…Specifically, the control of electronic transport by polarization reversal in a Bi-deficient Pt/BFO/SrRuO 3 (SRO) heterostructure epitaxially grown on a SrTiO 3 (STO) substrate was demonstrated 18,19 , showing endurance of >10 5 cycles and data retention of >10 5 s at room temperature 18 . The Bi deficiency δ increases the valence of Fe ions and confers a p-type character to the Bi 1- FeO 3 films.…”