Abstract:Besides being impacted by quantum confinement effects, the channel electrostatics of ultra-thin-body silicon-on-insulator (SOI) MOS devices, with channel thicknesses less than 10 nm, are also likely to be impacted by interface trap states. In this work, we comprehensively investigated the effect of band edge energy (surface passivation energy) on the band structure of the silicon channel. We propose to utilize this band edge energy (ΔEedge) to study the effect of interface traps on device electrostatics, which… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.