2014
DOI: 10.3389/fmats.2014.00018
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Impact of Atomic Layer Deposition to Nanophotonic Structures and Devices

Abstract: We review the significance of optical thin films by Atomic Layer Deposition (ALD) method to fabricate nanophotonic devices and structures. ALD is a versatile technique to deposit functional coatings on reactive surfaces with conformal growth of compound materials, precise thickness control capable of angstrom resolution, and coverage of high aspect ratio nano-structures using wide range of materials. ALD has explored great potential in the emerging fields of photonics, plasmonics, nano-biotechnology, and micro… Show more

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Cited by 18 publications
(11 citation statements)
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References 114 publications
(131 reference statements)
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“…Deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma deposition, atomic layer deposition (ALD), or RF sputtering allow the creation of waveguiding layers with high uniformity and accuracy, as well as multilayer stacks. The waveguiding layer(s) define primarily the guided mode effective index, and therefore the resonance frequency; accurately controlling the deposition is critical in many applications.…”
Section: Fabrication Techniques Implementations and Materialsmentioning
confidence: 99%
“…Deposition techniques such as chemical vapor deposition (CVD), physical vapor deposition (PVD), plasma deposition, atomic layer deposition (ALD), or RF sputtering allow the creation of waveguiding layers with high uniformity and accuracy, as well as multilayer stacks. The waveguiding layer(s) define primarily the guided mode effective index, and therefore the resonance frequency; accurately controlling the deposition is critical in many applications.…”
Section: Fabrication Techniques Implementations and Materialsmentioning
confidence: 99%
“…For these features, this technique is used to create inverse opals, allowing the formation of film with porosity control. This method and similar are effectively used with inverse opals based on SiO 2 or TiO 2 [ 148 , 149 , 150 , 151 , 152 ]. The maximum filling factor with this technique is 80%–86%, very close to the optimum 90% of pore volume and infiltration control <1 nm, allowing a fine tuning of PCs.…”
Section: Aunps With Inverse Opalsmentioning
confidence: 99%
“…In this paper we present a fabrication technique that satisfies the requirements stated above. We use Atomic Layer Deposition (ALD) 1 3 to grow a thin film of Titanium Dioxide (TiO 2 ) on top of a nanostructured surface-relief profile to form an element with a nearly flat top surface. TiO 2 is an excellent choice as a cover material due to its transparency over a wide spectral bandwidth, stability at high temperatures, relatively large dielectric constant, and high mechanical and chemical robustness.…”
Section: Introductionmentioning
confidence: 99%