Impact of annealing temperature on DSA process: toward faster assembly kinetics (Conference Presentation)

Suh, Hyo Seon; Nair, Akhil S.; Delgadillo, Paulina A. Rincon; Doise, Jan; Lorusso, Gian; Nealey, Paul F.; Monreal, Victor; Baskaran, Durairaj; Cao, Yi; Padmanaban, Munirathna; Li, Jin; Kato, Takeshi; Sutani, Takumichi; Ishimoto, Toru; Ikota, Masami; Koshihara, Shunsuke

doi:10.1117/12.2299496

Cited by 3 publications

(4 citation statements)

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“…Previous studies have shown that the lateral order of lamellar striped patterns formed by unguided self-assembly can be increased by raising the annealing temperature and time, ,− which qualitatively matches previously mentioned investigations on the kinetics of defect annihilation in DSA. − Logically, both processes are governed by the same molecular transport mechanisms that promote defect motion and annihilation. Herein, the results of a study of the relationship between the correlation length ξ of the unguided self-assembly and the kinetically trapped defect density in DSA under the same annealing conditions are described.…”

Section: Introductionsupporting

confidence: 85%

“…Recent work has shown that the kinetics of the annealing step plays a key role in the capability of the polymeric film to eliminate self-assembly defects. Theoretical as well as experimental investigations have shown that the free energy of a defective state is much higher than that of the aligned state and domain alignment occurs irreversibly, but there may be multiple activation energy barriers in the process that can trap the morphology in different defective states. − …”

Section: Introductionmentioning

confidence: 99%

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Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymers

Doise

Koh

Kim

et al. 2019

ACS Appl. Mater. Interfaces

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Directed self-assembly (DSA) of high-χ block copolymer thin films is a promising approach for nanofabrication of features with length scale below 10 nm. Recent work has highlighted that kinetics are of crucial importance in determining whether a block copolymer film can self-assemble into a defect-free ordered state. In this work, different strategies for improving the rate of defect annihilation in the DSA of a silicon-containing, high-χ block copolymer film were explored. Chemo-epitaxial DSA of poly(4-methoxystyrene-block-4-trimethylsilylstyrene) with 5× density multiplication was implemented on 300 mm wafers by using production level nanofabrication tools, and the influence of different processes and material parameters on dislocation defect density was studied. It was observed that only at sufficiently low χN can the block copolymer assemble into well-aligned patterns within a practical time frame. In addition, there is a clear correlation between the rate of the lamellar grain coarsening in unguided self-assembly and the rate of dislocation annihilation in DSA. For a fixed chemical pattern, the density of kinetically trapped dislocation defects can be predicted by measuring the correlation length of the unguided self-assembly under the same process conditions. This learning enables more efficient screening of block copolymers and annealing conditions by rapid analysis of block copolymer films that were allowed to self-assemble into unguided (commonly termed fingerprint) patterns.

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Section: Introductionsupporting

confidence: 85%

Section: Introductionmentioning

confidence: 99%

Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymers

Doise

Koh

Kim

et al. 2019

ACS Appl. Mater. Interfaces

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“…For the bridge type defects presented in yellow and orange, no clear trend could be observed from this data set. As dislocation defects are kinetically trapped structures, 3 they disappear when increasing the annealing temperature. This is visualized in Figure 8.…”

Section: Defectivity Study Of Euv + Dsamentioning

confidence: 99%

“…Up till now, LiNe flow has been extensively studied in terms of roughness and defectivity to understand the BCP behavior and to consider it for high volume manufacturing. [2][3][4][5] With the introduction of EUV lithography, however, feature density multiplication is no longer the main trait of DSA patterning. Instead, the ability to rectify EUV resist patterns has recently received a lot of attention.…”

Section: Introductionmentioning

confidence: 99%

EUV lithography line-space pattern rectification using block copolymer directed self-assembly: a roughness and defectivity study

Bel¹,

Verstraete²,

Suh³

et al. 2023

Novel Patterning Technologies 2023

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For printing the most critical features in semiconductor devices, single exposure extreme ultraviolet (EUV) lithography is quickly advancing as a replacement for ArF immersion-based multipatterning approaches. However, the transition from 193 nm to 13.5 nm light is severely limiting the number of photons produced by a given source power, leading to photon shot noise in EUV patterns. In addition, inhomogeneous distribution of components inside conventional photoresists is adding to the printing variability, especially when critical dimensions continue to shrink. As a result, stochastic issues leading to rough, non-uniform, and potentially defective patterns have become a major challenge for EUV lithography. A promising solution for this top-down patterning approach is complementing it with bottom-up directed self-assembly (DSA) of block copolymers. In combination with 193i lithography, DSA of lamellae forming block copolymers has previously shown favorable results for defining dense line-space patterns using LiNe flow.1 In this study, we investigate the complementarity of EUV + DSA for rectification of pitch 28 nm line-space patterns. Roughness and defectivity are critical factors that need to be controlled to make these patterns industrially relevant. We look at the impact of DSA material and processing parameters on line edge roughness and line width roughness in order to identify and mitigate the origins of pattern roughness. On the other hand, we also assess the different types of defect modes that are observed by means of optical defect inspection and ebeam review, and study the root causes for their formation. To wrap-up, the benefits of 1X DSA versus 3X DSA are presented by comparing EUV + DSA to LiNe flow.

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Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers

Doise

Mannaert

Suh

et al. 2019

Advances in Patterning Materials and Processes XXXVI

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Impact of annealing temperature on DSA process: toward faster assembly kinetics (Conference Presentation)

Cited by 3 publications

References 0 publications

Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymers

Strategies for Increasing the Rate of Defect Annihilation in the Directed Self-Assembly of High-χ Block Copolymers

EUV lithography line-space pattern rectification using block copolymer directed self-assembly: a roughness and defectivity study

Defect mitigation in sub-20nm patterning with high-chi, silicon-containing block copolymers

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