2020 International Symposium on Devices, Circuits and Systems (ISDCS) 2020
DOI: 10.1109/isdcs49393.2020.9263012
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Impact of AlGaN Doping Concentration on the Analog/RF Performance of a Double Gate Underlap n-AlGaN/GaN MOSHEMT

Rajrup Mitra1,
Akash Roy2,
Atanu Kundu3
et al.
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