Impact of Al&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; Buffer Layer on Ultra-Thin Flexible Polyimide Substrates for Transparent and Flexible InGaZnO Thin Film Transistors

Jang, Hye‐Won; Kim, Hyeong-Rae; Yang, Ji Ho; Byun, Chun‐Won; Yoon, Sung-Min

doi:10.23919/am-fpd.2018.8437366

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Flexible Substrates and The Delamination Process1

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2019

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“…PEN has a lower T g (<180 °C) but has advantages in terms of manufacturing cost and transparency. Recently, colorless PI (CPI) have been developed and have become another candidate for flexible substrates [78]. Table 1 summarized the basic properties of various plastic substrates.…”

Section: Flexible Substrates and The Delamination Processmentioning

confidence: 99%

Recent review on improving mechanical durability for flexible oxide thin film transistors

Han¹,

Jeong²,

Kim³

et al. 2019

J. Phys. D: Appl. Phys.

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Amorphous oxide semiconductor thin film transistors (AOS TFT) have recently attracted attention as next generation display backplane materials. In this article, the current research trends and status of AOS TFTs for flexible displays are discussed. First, the degradation mechanism of AOS TFTs via bending stress is examined. In this part, we investigate how to define bending strain, i.e. how the bending stress deteriorates the TFT performance. In addition, we examine the recovery process of the mechanically degraded TFT via thermal energy. Then, we introduce various materials and structures to improve the mechanical durability of AOS TFTs. The material approach as well as the structural approach for each layer (substrate, buffer layer, electrode, active and gate insulator) are included in this paper.

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Section: Flexible Substrates and The Delamination Processmentioning

confidence: 99%