Impact-ionization theory consistent with a realistic band structure of silicon

Sano, Nobuyuki; Yoshii, Akira

doi:10.1103/physrevb.45.4171

Cited by 145 publications

(66 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…This is essential in the present context, since the transitions considered always involve conduction states. The many-fold integration over the full BZ was carried out using the technique proposed by Sano and Yoshii, 9 based on a regular grid of k points ͓with an interval length ⌬kϭ(1/n)2 /a,nϭ10͔. Similarly to band-structure calculations in the sX-LDA FLAPW method, 13 the sX-LDA self-consistent charge density and sX operator ͓Eq.…”

Section: ͑4͒mentioning

confidence: 99%

“…The interaction between valence and conduction electrons is modeled by a Coulomb potential screened through a q-dependent static model dielectric function 12 (q) which is particularly accurate for semiconductors. The interaction between conduction electrons is modeled through a Debye potential; 2 both the temperature T and the carrier density in the conduction band n 0 are taken into account through an inverse Debye screening length 9 given by ϭͱ4 n 0 e 2 /K B T, where K B is the Boltzmann constant. Here, we used Tϭ300 K and n 0 ϭ1ϫ10 16 cm Ϫ3 .…”

mentioning

confidence: 99%

See 1 more Smart Citation

Impact ionization in GaAs: A screened exchange density-functional approach

Picozzi

Asahi

Geller³

et al. 2002

Phys. Rev. B

134

177

View full text Add to dashboard Cite

NOTICEThis report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, nor any of their contractors, subcontractors or their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or any third party's use or the results of such use of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise, does not necessarily constitute or imply its endorsement, recommendation, or favoring by the United States Government or any agency thereof or its contractors or subcontractors. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.

show abstract

Section: ͑4͒mentioning

confidence: 99%

mentioning

confidence: 99%

Impact ionization in GaAs: A screened exchange density-functional approach

Picozzi

Asahi

Geller³

et al. 2002

Phys. Rev. B

134

177

View full text Add to dashboard Cite

show abstract

“…More complete full-bandstructure calculations of the impact ionization rate have been reported for Si [50,51], GaAs [51,52] and wide bandgap materials [53], which are fairly well fit using using power law model. Within the ensemble Monte Carlo method, the scattering rate given by Eq.…”

Section: 53mentioning

confidence: 81%

Monte Carlo Device Simulations

Raleva¹,

Shaik

Hathwar

et al. 2011

Applications of Monte Carlo Method in Science and Engineering

View full text Add to dashboard Cite

As semiconductor devices are scaled into nanoscale regime, first velocity saturation starts to limit the carrier mobility due to pronounced intervalley scattering, and when the device dimensions are scaled to 100 nm and below, velocity overshoot (which is a positive effect) starts to dominate the device behavior leading to larger ON-state currents. Alongside with the developments in the semiconductor nanotechnology, in recent years there has been significant progress in physical based modeling of semiconductor devices. First, for devices for which gradual channel approximation can not be used due to the two-dimensional nature of the electrostatic potential and the electric fields driving the carriers from source to drain, drift-diffusion models have been exploited. These models are valid, in general, for large devices in which the fields are not that high so that there is no degradation of the mobility due to the electric field. The validity of the drift-diffusion models can be extended to take into account the velocity saturation effect with the introduction of field-dependent mobility and diffusion coefficients. When velocity overshoot becomes important, drift diffusion model is no longer valid and hydrodynamic model must be used. The hydrodynamic model has been the workhorse for technology development and several high-end commercial device simulators have appeared including Silvaco, Synopsys, Crosslight, etc. The advantages of the hydrodynamic model are that it allows quick simulation runs but the problem is that the amount of the velocity overshoot depends upon the choice of the energy relaxation time. The smaller is the device, the larger is the deviation when using the same set of energy relaxation times. A standard way in calculating the energy relaxation times is to use bulk Monte Carlo simulations. However, the energy relaxation times are material, device geometry and doping dependent parameters, so their determination ahead of time is not possible. To avoid the problem of the proper choice of the energy relaxation times, a direct solution of the Boltzmann Transport Equation (BTE) using the Monte Carlo method is the best method of choice. That is why the focus of this review paper is on explaining basic Monte Carlo device simulator and then the focus will be shifted on the inclusion of various higher order effects that explain particular physical phenomena or processes.The Monte Carlo book chapter is organized as follows. First, the idea behind the Monte Carlo technique is outlined by revoking the path integral method for the solution of the BTE. This approach naturally leads to the free-flight-scatter sequence that is used in solving the BTE using the Monte Carlo method. Various scattering mechanisms relevant for different materials are given to completely specify the collision integral in the BTE. A discussion followed with the presentation of a generic flow-chart for implementing bulk Monte Carlo code is presented. Note that bulk Monte Carlo approach is suitable for the characterization of ma...

show abstract

“…1) of the first BZ into fine tetrahedra, and store the band energies and the cell-periodic overlap parameters at the nodes of these tetrahedra. Even though the term # W j;m 0 ð W k 0 Þ is not confined to the IW, ZB and WZ point-group symmetry operations [8,9] can be applied to generate the images of the points in IW, and hence, the overall integration can essentially be performed exploiting the tetrahedra in IW. It needs to be mentioned that very fine division of the IW ($400,000 tetrahedra) is necessary to reduce the computational ripple, especially favoring the high-symmetry points where satellite valleys are present.…”

Section: Theoretical Approachmentioning

confidence: 99%

Polar optical phonon scattering and negative Krömer–Esaki–Tsu differential conductivity in bulk GaN

Bulutay

Ridley

Zakhleniuk

2001

Journal of Crystal Growth

View full text Add to dashboard Cite

GaN is being considered as a viable alternative semiconductor for high-power solid-state electronics. This creates a demand for the characterization of the main scattering channel at high electric fields. The dominant scattering mechanism for carriers reaching high energies under the influence of very high electric fields is the polar optical phonon (POP) emission. To highlight the directional variations, we compute POP emission rates along high-symmetry directions for the zinc-blende and wurtzite crystal phases of GaN. Our treatment relies on the empirical pseudopotential energies and wave functions. The scattering rates are efficiently computed using the Lehmann-Taut Brillouin zone integration technique. For both crystal phases, we also consider the negative differential conductivity possibilities associated with the negative effective mass part of the band structure. #

show abstract

Impact-ionization theory consistent with a realistic band structure of silicon

Cited by 145 publications

References 25 publications

Impact ionization in GaAs: A screened exchange density-functional approach

Impact ionization in GaAs: A screened exchange density-functional approach

Monte Carlo Device Simulations

Polar optical phonon scattering and negative Krömer–Esaki–Tsu differential conductivity in bulk GaN

Contact Info

Product

Resources

About