2009
DOI: 10.1007/978-3-540-95946-5_216
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Impact Ionization in InSb studied by THz-Pump-THz-probe spectroscopy

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(2 citation statements)
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“…This means the high-field nonlinear transport properties of semiconductors can no longer be ignored in engineering [93][94][95][96]. Although the high-field properties that affect transport on the nanometer and ultrashort time-period scales are not well understood, they can be investigated with intense THz pulse sources [97][98][99][100][101][102][103].…”
Section: Carrier Generation By Intense Terahertz Pulse Excitationmentioning
confidence: 99%
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“…This means the high-field nonlinear transport properties of semiconductors can no longer be ignored in engineering [93][94][95][96]. Although the high-field properties that affect transport on the nanometer and ultrashort time-period scales are not well understood, they can be investigated with intense THz pulse sources [97][98][99][100][101][102][103].…”
Section: Carrier Generation By Intense Terahertz Pulse Excitationmentioning
confidence: 99%
“…Carriers accelerated ballistically on ultra-short timescales can therefore be expected to gain kinetic energy more efficiently and thereby trigger carrier multiplication. However, insufficiently strong THz pulses generate few carriers [101], and various additional phenomena induced by them, such as phonon absorption [102], intervalley scattering [98], and exciton dissociation [60,113], obscure the carrier multiplication.…”
Section: Carrier Generation By Intense Terahertz Pulse Excitationmentioning
confidence: 99%