Abstract:Nowadays, the impact ionization coefficient in the avalanche breakdown theory is obtained using 1-D PN junctions or SBDs, and is considered to be a constant determined by the material itself only. In this paper, the impact ionization coefficient of silicon in a 2D lateral power device is found to be no longer a constant, but instead a function of the 2D coupling effects. The impact ionization coefficient of silicon that considers the 2D depletion effects in real-world devices is proposed and extracted in this … Show more
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