2016
DOI: 10.1063/1.4971266
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Imaging photocurrent collection losses in solar cells

Abstract: A method is proposed that enables the imaging of the photocurrent collected by a solar cell under arbitrary operating conditions. The method uses a series of luminescence images under varying illumination to derive the total photocurrent collection efficiency at a given voltage bias. The resulting total photocurrent collection image directly relates to the difference between the dark and illuminated current-voltage characteristics of the cell. A crystalline silicon solar cell is used to test the method, and th… Show more

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Cited by 9 publications
(7 citation statements)
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“…Meanwhile, the simulated f T – V curves of the correlated areas in Figure d extracted from the network model are shown in Figure (solid lines). We can observe that the locally averaged f T values decrease with increasing applied voltage, which is caused by a decrease in the diode resistance compared to the series resistance within the cell . It is also evident that a transition voltage V b can be observed at the crossover point between the nonshunted and ohmic shunted areas.…”
Section: Resultsmentioning
confidence: 80%
“…Meanwhile, the simulated f T – V curves of the correlated areas in Figure d extracted from the network model are shown in Figure (solid lines). We can observe that the locally averaged f T values decrease with increasing applied voltage, which is caused by a decrease in the diode resistance compared to the series resistance within the cell . It is also evident that a transition voltage V b can be observed at the crossover point between the nonshunted and ohmic shunted areas.…”
Section: Resultsmentioning
confidence: 80%
“…Therefore, δI L (x,y)S is equal to δI * T;sc ; the terminal current increment at short circuit. The validation of this assumption has been observed on silicon cells under roughly 2 suns, 24 GaAs cells up to 47 suns, 10 and CdTe cells at 1.5 suns. 8 We note that these may not always be the case, for example when illumination is too high in Huhn et al 24 f t drops due to lateral current transport depending on the illumination intensities, dark currents, and sheet resistances.…”
Section: Methodsmentioning
confidence: 80%
“…The validation of this assumption has been observed on silicon cells under roughly 2 suns, GaAs cells up to 47 suns, and CdTe cells at 1.5 suns . We note that these may not always be the case, for example when illumination is too high in Huhn et al ftrue¯t drops due to lateral current transport depending on the illumination intensities, dark currents, and sheet resistances. For less ideal cells or under higher illumination, those quantities can be solved by a nonlinear differential equation to verify the assumption.…”
Section: Methodsmentioning
confidence: 99%
“…4b) 15 , which shows a homogeneous diode voltage distribution with a fluctuation of about 1 mV. No obvious diode voltage change between the fingers is observed indicating a good lateral conductance without TCO [16][17][18] . Fig.…”
Section: ωCmmentioning
confidence: 95%