2015
DOI: 10.1016/j.synthmet.2014.11.037
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Imaging of morphological changes and phase segregation in doped polymeric semiconductors

Abstract: The electrical conductivity and morphological characteristics of two conjugated polymers, P3HT and PCPDTBT, p-doped with the strong electron acceptor tetrafluorotetracyanoquinodimethane (F4-TCNQ) are studied as a function of dopant concentration. By combining scanning and transmission electron microscopy, SEM and TEM, with electrical characterisation we observe a correlation between the saturation in electrical conductivity and the formation of dopant rich clusters. We demonstrate that SEM is a useful techniqu… Show more

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Cited by 32 publications
(37 citation statements)
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“…Doping of the polymer with F4TCNQ leads to a shift of the out‐of‐plane 100 diffraction from 3.6 to 2.9 nm −1 as a result of incorporation of the dopant in the polymer crystals, which has also been observed for P3HT doped with F4TCNQ. Interestingly, we do not observe an additional diffraction peak at ≈7.7 nm −1 from F4TCNQ crystals (Figure S10, Supporting Information) at higher dopant fractions as has been reported for P3HT:F4TCNQ . We argue that the dopant stays molecularly dispersed in the polymer film even after addition of a larger dopant fraction and does not crystallize.…”
supporting
confidence: 79%
“…Doping of the polymer with F4TCNQ leads to a shift of the out‐of‐plane 100 diffraction from 3.6 to 2.9 nm −1 as a result of incorporation of the dopant in the polymer crystals, which has also been observed for P3HT doped with F4TCNQ. Interestingly, we do not observe an additional diffraction peak at ≈7.7 nm −1 from F4TCNQ crystals (Figure S10, Supporting Information) at higher dopant fractions as has been reported for P3HT:F4TCNQ . We argue that the dopant stays molecularly dispersed in the polymer film even after addition of a larger dopant fraction and does not crystallize.…”
supporting
confidence: 79%
“…[38,51] Based on our studies, we suggest that smaller, more efficient dopants can potentially further increase the PCE of BHJs. Due to the generally low dielectric constant of organic semiconductors, dopant ions can form Coulomb traps, limiting the efficiency of free-carrier generation and hindering charge transport.…”
Section: Resultsmentioning
confidence: 75%
“…As shown in Figure 3, doping the PTAA film by 1 wt% F4-TCNQ reduced the device series resistance from 9.07 Ω cm 2 for non-doped PTAA to 6.07 Ω cm 2 . Further increasing F4-TCNQ doping level to 10 wt% increased the device series resistance to 9.77 Ω cm 2 , most likely caused by the increased aggregation of F4-TCNQ [28][29][30][31]. The series resistance derived from the J-V curve slope can be an indirect evidence for the doping effect because it represents the series resistance of the whole device rather than the PTAA films.…”
Section: Resultsmentioning
confidence: 99%