2019
DOI: 10.1021/acsnano.8b06806
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Imaging of Carbon Nanotube Electronic States Polarized by the Field of an Excited Quantum Dot

Abstract: Efficient heat dissipation and large gate capacitance have made carbon nanotube field-effect transistors (CNT FETs) devices of interest for over 20 years. The mechanism of CNT FETs involves localization of the electronic structure due to a transverse electric field, yet little is known about the localization effect, nor has the electronic polarization been visualized directly. Here, we co-deposit PbS quantum dots (QDs) with CNTs and optically excite the QD so its excited-state dipolar field biases the local en… Show more

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Cited by 3 publications
(2 citation statements)
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“…As shown previously (7), tip perturbation of the carbon-dot bandgaps at low tunneling current (100 pA) and voltage (∼1 V) is small. However, Stark shift perturbations that occur at high field can be imaged for carbon materials (16).…”
Section: Significancementioning
confidence: 99%
“…As shown previously (7), tip perturbation of the carbon-dot bandgaps at low tunneling current (100 pA) and voltage (∼1 V) is small. However, Stark shift perturbations that occur at high field can be imaged for carbon materials (16).…”
Section: Significancementioning
confidence: 99%
“…Thus, a local field enhancement factor (FEF), γ­( r ), can be defined as γ­( r ) = F ( r )/ F M , where F ( r ) is a particular local field at a point in three-dimensional space. Because of the variable aspect ratio (ratio of longitudinal to lateral dimensions) of CNTs and, consequently, the tunability of their FEFs, they find applications in many areas, ranging from nanoelectronics , to biological sensors. , …”
Section: Introductionmentioning
confidence: 99%