Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy

Hermann, Péter; Hecker, M.; Chumakov, Dmytro; Weisheit, Martin; Rinderknecht, J.; Shelaev, A. V.; Dorozhkin, Pavel; Eng, Lukas M.

doi:10.1016/j.ultramic.2011.08.009

Cited by 37 publications

(26 citation statements)

References 31 publications

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“…The strain-induced shift of the first order 520 cm -1 Raman peak associated with optical phonons in silicon has been used to spatially map stress variations using TERS, with a lateral resolution of 20-25 nm [11,70]. A similar resolution has been achieved in the strain-mapping of patterned SiGe structures [75]. A practical issue in the TERS measurements on bulk semiconductors is the presence of far-field artefacts in the near-field signal.…”

Section: Crystalline and Semiconductor Materialsmentioning

confidence: 99%

Tip-enhanced Raman spectroscopy: principles and applications

et al. 2015

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This review provides a detailed overview of the state of the art in tip-enhanced Raman spectroscopy (TERS) and focuses on its applications at the horizon including those in materials science, chemical science and biological science. The capabilities and potential of TERS are demonstrated by summarising major achievements of TERS applications in disparate fields of scientific research. Finally, an outlook has been given on future development of the technique and the mechanisms of achieving high signal enhancement and spatial resolution.

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Section: Crystalline and Semiconductor Materialsmentioning

confidence: 99%

Tip-enhanced Raman spectroscopy: principles and applications

et al. 2015

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“…Under optimized conditions the illuminated tip acts as an antenna that confines the incident electric field around the tip-apex, thus providing a nanoscale light source for high-resolution imaging. Depending on the wavelength of the incident photons and by analyzing the scattered light with a spectrometer system, sample properties in the visible [9][10][11][12][13][14][15], IR [16][17][18][19][20], and THz [21][22][23][24][25][26] regime can be investigated with the additional benefit of a significantly improved spatial resolution. For wavelengths in the IR regime this technique has already been applied to many different sample systems, e.g.…”

Section: Introductionmentioning

confidence: 99%

Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

Hermann¹,

Hoehl²,

Ulrich³

et al. 2014

Opt. Express

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Abstract:We describe the application of scattering-type near-field optical microscopy to characterize various semiconducting materials using the electron storage ring Metrology Light Source (MLS) as a broadband synchrotron radiation source. For verifying high-resolution imaging and nano-FTIR spectroscopy we performed scans across nanoscale Si-based surface structures. The obtained results demonstrate that a spatial resolution below 40 nm can be achieved, despite the use of a radiation source with an extremely broad emission spectrum. This approach allows not only for the collection of optical information but also enables the acquisition of nearfield spectral data in the mid-infrared range. The high sensitivity for spectroscopic material discrimination using synchrotron radiation is presented by recording near-field spectra from thin films composed of different materials used in semiconductor technology, such as SiO 2 , SiC, Si x N y , and TiO 2 . ©2014 Optical Society of AmericaOCIS codes: (120.0120) Instrumentation, measurement, and metrology; (180.4243) Near-field microscopy; (240.0240) Optics at surfaces; (300.0300) Spectroscopy; (310.6860) Thin films, optical properties. 1248-1262 (2014). 5. S. Kawata and Y. Inouye, "Scanning probe optical microscopy using a metallic probe tip," Ultramicroscopy 57(2-3), 313-317 (1995). 6. F. Zenhausern, Y. Martin, and H. K. Wickramasinghe, "Scanning interferometric apertureless microscopy: References and linksOptical imaging at 10 angstrom resolution," Science 269(5227), 1083-1085 (1995). 7. R. Bachelot, P. Gleyzes, and A. C. Boccara, "Near-field optical microscope based on local perturbation of a diffraction spot," Opt. Lett. 20(18), 1924-1926 (1995). 8. B. Knoll and F. Keilmann, "Near-field probing of vibrational absorption for chemical microscopy," Nature 399(6732), 134-137 (1999 Helm, "Anisotropy contrast in phonon-enhanced apertureless near-field microscopy using a free-electron laser," Phys. Rev. Lett.

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“…Germanium has also been investigated, often in conjunction with Si [93][94][95]. An interesting result showed asymmetric broadening of bands was observed that corresponded to decreases in the nanowire diameter [96].…”

Section: Applications Of Tersmentioning

confidence: 99%

Tip enhanced Raman scattering: plasmonic enhancements for nanoscale chemical analysis

2014

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Tip enhanced Raman scattering (TERS) is an emerging technique that uses a metalized scanning probe microscope tip to spatially localize electric fields that enhances Raman scattering enabling chemical imaging on nanometer dimensions. Arising from the same principles as surface enhanced Raman scattering (SERS), TERS offers unique advantages associated with controling the size, shape, and location of the enhancing nanostructure. In this article we discuss the correlations between current understanding of SERS and how this relates to TERS, as well as how TERS provides new understanding and insights. The relationship between plasmon resonances and Raman enhancements is emphasized as the key to obtaining optimal TERS results. Applications of TERS, including chemical analysis of carbon nanotubes, organic molecules, inorganic crystals, nucleic acids, proteins, cells and organisms, are used to illustrate the information that can be gained. Under ideal conditions TERS is capable of single molecule sensitivity and sub-nanometer spatial resolution. The ability to control plasmonic enhancements for chemical analysis suggests new experiments and opportunities to understand molecular composition and interactions on the nanoscale.

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Imaging and strain analysis of nano-scale SiGe structures by tip-enhanced Raman spectroscopy

Cited by 37 publications

References 31 publications

Tip-enhanced Raman spectroscopy: principles and applications

Tip-enhanced Raman spectroscopy: principles and applications

Characterization of semiconductor materials using synchrotron radiation-based near-field infrared microscopy and nano-FTIR spectroscopy

Tip enhanced Raman scattering: plasmonic enhancements for nanoscale chemical analysis

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