Abstract:Epitaxial heterostructures constitute a wide variety of modern microelectronics devices. In the limit of ever decreasing feature dimensions, now entering the nanoscale in some cases, the interfaces of such devices are crucial to their operation and performance. In general the properties of the interfaces will differ significantly from those of the bulk structure of either the substrate or the heteroepitaxial film. To date, direct, non-destructive characterizations of the atomic-level structure of films and int… Show more
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