Illumination intensities effect on electronic properties of Fe–Ni–Mn/p-Si Schottky diode

Aldırmaz, E.; Güler, M.; Güler, E.

doi:10.1007/s10854-021-07609-4

Cited by 5 publications

(3 citation statements)

References 52 publications

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“…The photocurrent-time in dark and under light (100 mW.cm −2 ) intensity of all the structures is given in figure 5(c). As can be seen in figure 5(c), all the structures have photoconductive behavior [54]. This behavior is proof that all diodes have photodiode properties.…”

Section: Morphological and Optical Propertiessupporting

confidence: 66%

“…In addition, it may be because the generation and separation of electron-hole pairs, and the interfacial states activate increases with light intensities [55][56][57]. Such behaviors of these electrical parameters have been reported by different authors [54][55][56][57][58][59]. The n value should be 1 for an ideal diode.…”

Section: Morphological and Optical Propertiesmentioning

confidence: 70%

“…In this study, we carried out I-V measurements for all the structures at various light intensities, as shown in figures S10(a)-(d). As shown in these figures, especially in reverse bias, more electrons pass to the conduction band with increasing light intensities and this causes an increase in the current of the diode [54]. The basic electrical parameters depending on the light intensities of these devices are listed in table S1.…”

Section: Morphological and Optical Propertiesmentioning

confidence: 99%

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The photodiode performances of NDI-appended ruthenium complexes

Seven,

Yigit,

Bayindir

et al. 2024

Nano Ex.

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The synthesis and investigation of photoelectric studies of simple organic compounds as organic interlayers are of significant importance and widely studied. As such, we synthesized naphthalene diimide (NDI)-appended ruthenium complexes (Ru-NDIs) to function as the interface layer, and have fabricated novel Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) to investigate their photoelectric properties. Subsequently, we compared and discussed the photoelectric properties of these devices after synthesis and fabrication. According to this, the band-gap energy (Eg) values of organic materials were found to range from 2.95 eV to 3.14 eV, making them ideal for solar cells applications. Additionally, the photoresponse (Pr) values of Al/NDIs or Ru-NDIs/p-Si devices (D1-D4) were found to be 59.25, 1593.08, 198.77, and 134.47, respectively. Moreover, the Al/Ru-NDIs/p-Si D2 structure exhibited the highest Pr values. Experimental results indicate that since the four optoelectronic devices arranged with the derivation of synthesized compounds have good photoresponse characteristics, they can be utilized as a photosensor or photodiodes in different electronic and optoelectronic technologies.

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Section: Morphological and Optical Propertiessupporting

confidence: 66%