Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell

Ko, Wai Son; Tran, Thai-Truong D.; Bhattacharya, Indrasen; Ng, Kar Wei; Sun, Hao; Chang-Hasnain, Connie J.

doi:10.1021/acs.nanolett.5b00756

Cited by 25 publications

(25 citation statements)

References 38 publications

(86 reference statements)

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“…This integrated material template has enabled high-performance optoelectronic devices for light emission, 20,26−28 light detection, 26,29,30 and photovoltaics. 31 An integrated optical link was also demonstrated, showing the potency of the micro/nanostructures for optical interconnect with higher speed and lower power consumption than their traditional electrical counterparts. 32 This can be crucial, to the increasing bandwidth demands of communication network.…”

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confidence: 99%

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Tran

et al. 2015

Nano Lett.

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The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality heterogeneous integration opens a pathway toward a complete photonic integrated circuit and high-efficiency cost-effective solar cells. In this paper, we present a thorough material study of novel metastable InP micropillars monolithically grown on silicon, focusing on two enabling aspects of this technology-the stress relaxation mechanism at the heterogeneous interface and the microstructure surface quality. Aberration-corrected transmission electron microscopy studies show that InP grows directly on silicon without any amorphous layer in between. A set of periodic dislocations was found at the heterointerface, relaxing the 8% lattice mismatch between InP and Si. Single crystalline InP therefore can grow on top of the fully relaxed template, yielding high-quality micropillars with diameters expanding beyond 1 μm. An interesting power-dependence trend of carrier recombination lifetimes was captured for these InP micropillars at room temperature, for the first time for micro/nanostructures. By simply combining internal quantum efficiency with carrier lifetime, we revealed the recombination dynamics of nonradiative and radiative portions separately. A very low surface recombination velocity of 1.1 × 10(3) cm/sec was obtained. In addition, we experimentally estimated the radiative recombination B coefficient of 2.0 × 10(-10) cm(3)/sec for pure wurtzite-phased InP. These values are comparable with those obtained from InP bulk. Exceeding the limits of conventional nanowires, our InP micropillars combine the strengths of both nanostructures and bulk materials and will provide an avenue in heterogeneous integration of III-V semiconductor materials onto silicon platforms.

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confidence: 99%

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Tran

et al. 2015

Nano Lett.

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“…The growth is in a radial manner, with tunable material composition and doping possible in the core-shell direction, using which p-i-n junction diode devices have already been demonstrated 46 47 . As opposed to an axial distribution of dopants, the core-shell junction geometry is highly beneficial in terms of minimizing surface exposure of the minority carriers and leads to a far reduced dark current for the base-emitter junction 48 . Another benefit of the core-shell or wrap-around geometry, in analogy with waveguide integrated photodetectors, is that it decouples the light propagation direction from the carrier transport direction, thus allowing the photogenerated carriers to diffuse to the p-n-p junction within a short distance 4 49 .…”

Section: Resultsmentioning

confidence: 99%

“…The base doping was measured in an isotype n-doped pillar with the same dopant precursor flow rate using the Burstein-Moss shift in photoluminescence peak and estimated to be approximately 10 18 cm −3 (Ref. 48 ).…”

Section: Resultsmentioning

confidence: 99%

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

Bhattacharya

Tran

et al. 2016

Sci Rep

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Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly promising for photodetection in energy-efficient optical links because of the potential to scale down the absorber size, and the resulting capacitance and dark current, while maintaining high quantum efficiency. We demonstrate a compact bipolar junction phototransistor with a high current gain (53.6), bandwidth (7 GHz) and responsivity (9.5 A/W) using a single crystalline indium phosphide nanopillar directly grown on a silicon substrate. Transistor gain is obtained at sub-picowatt optical power and collector bias close to the CMOS line voltage. The quantum efficiency-bandwidth product of 105 GHz is the highest for photodetectors on silicon. The bipolar junction phototransistor combines the receiver front end circuit and absorber into a monolithic integrated device, eliminating the wire capacitance between the detector and first amplifier stage.

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“…Vertically standing NWs are higher in efficiency due to their light-concentrating property. Ko et al achieved an efficiency of 19.6% using InP NWs [110]. Krogstrup et al even reported a high experimental efficiency of 40% using GaAs NWs [55].…”

Section: Single-junction Solar Cellsmentioning

confidence: 99%

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

Zhang

Liu

2019

Crystals

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Solar energy is abundant, clean, and renewable, making it an ideal energy source. Solar cells are a good option to harvest this energy. However, it is difficult to balance the cost and efficiency of traditional thin-film solar cells, whereas nanowires (NW) are far superior in making high-efficiency low-cost solar cells. Therefore, the NW solar cell has attracted great attention in recent years and is developing rapidly. Here, we review the great advantages, recent breakthroughs, novel designs, and remaining challenges of NW solar cells. Special attention is given to (but not limited to) the popular semiconductor NWs for solar cells, in particular, Si, GaAs(P), and InP.

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Illumination Angle Insensitive Single Indium Phosphide Tapered Nanopillar Solar Cell

Cited by 25 publications

References 38 publications

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Wurtzite-Phased InP Micropillars Grown on Silicon with Low Surface Recombination Velocity

Ultrahigh Responsivity-Bandwidth Product in a Compact InP Nanopillar Phototransistor Directly Grown on Silicon

Nanowires for High-Efficiency, Low-Cost Solar Photovoltaics

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