III-VI compound semiconductor indium selenide (In2Se3) nanowires: Synthesis and characterization

Sun, Xuhui; Yu, Bin; Ng, Garrick; Nguyen, Thuc D.; Meyyappan, M.

doi:10.1063/1.2388890

Cited by 94 publications

(85 citation statements)

References 18 publications

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“…We and others have recently developed the synthesis of single crystalline In 2 Se 3 [26,27] and GaSe [28] nanowires (NWs) because NW morphology not only provides the opportunity to engineer materials for better device performance in applications such as transistors [29 31], solar cells [32 33], nanogenerators [34], batteries [35 37], and memory devices [38 40], but also affords well-defined nanoscale domains in which to correlate structure and properties [41,42]. We have observed a metal-to-insulator transition in In 2 Se 3 NWs, which correlated with a four-fold superlattice-to-normal-lattice transition induced by additional In vacancies, using single NW electron transport and transmission electron microscopy (TEM) [26].…”

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Vacancy ordering and lithium insertion in III2VI3 nanowires

et al. 2009

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Superlattice structures resulting from vacancy ordering have been observed in many materials. Here we report vacancy ordering behavior in 2 3 nanowires. The formation of layer-like structural vacancies has been achieved during the synthesis of In 2 Se 3 nanowires through a vapor-transport route. Doping In 2 Se 3 nanowires with small amounts of Ga during synthesis can completely change the structural vacancy ordering from a layer-like to a screw-like pattern for (In x Ga 1 x ) 2 Se 3 nanowires. Lithium atoms can fi ll in the layer-like structural vacancies of In 2 Se 3 nanowires and generate new types of vacancy and lithium atom ordering superlattices. The screw-patterned vacancies of (In x Ga 1 x ) 2 Se 3 nanowires show reversible lithium insertion. Our results contribute to the understanding of structure property correlations of 2 3 materials used in lithium ion storage, photovoltaics, and phase change memory. KEYWORDSNanowire (NW), vacancy ordering, superlattice, , lithium insertion Vacancies are a classical point defect and play an important role in atomic diffusion, doping, and color centers in ionic crystals. Vacancy ordering phenomena have been investigated in nonstoichiometric bulk materials including oxides [1 3], chalcogenides [4 6], carbides [7, 8], silicides [9], and nitrides [10]. The ability to arrange vacancies is important for gaining control over material properties. For example, oxygen vacancy ordering in transition metal oxides has been shown to affect their ferroelectric properties and hightemperature superconductivity [11, 12]; intercalation materials such as Li x TiS 2 , Li x TaS 2 , and Li x CoO 2 have been shown to form superlattice structures upon Li deintercalation, which is due to lithium and vacancy ordering and is critical to the structure stability and kinetics of Li-ion battery electrodes [13 16]; the ordered vacancy compound at the CuIn(Ga)Se 2 CdS interface has different electrical properties from CuIn(Ga)Se 2 and is believed to play an important role in the high effi ciency of CuIn(Ga)Se 2 solar cells [5, 17, 18]. The semiconductors have attracted attention because of their unique structural, optical, and electrical properties, which result in applications including lithium ion batteries [19, 20], photovoltaics [21 23], and phase-change memory [24, 25]. Owing to the mismatch between and atoms, bulk compounds show a variety of crystal polymorphism Nano Res (Nano Research depending on the growth conditions. We and others have recently developed the synthesis of single crystalline In 2 Se 3 [26, 27] and GaSe [28] nanowires (NWs) because NW morphology not only provides the opportunity to engineer materials for better device performance in applications such as transistors [29 31], solar cells [32 33], nanogenerators [34], batteries [35 37], and memory devices [38 40], but also affords well-defined nanoscale domains in which to correlate structure and properties [41,42]. We have observed a metal-to-insulator transition in In 2 Se 3 NWs, which correlated with a four-fold superlattice-to-...

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Vacancy ordering and lithium insertion in III2VI3 nanowires

et al. 2009

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“…13,14 Specifically, In 4 Se 3 forms a layered structure of (In 3 ) 5+ 20 multivalent clusters bonded to Se ions, 1 while for α/β-In 2 Se 3 and β/γ-InSe, atomic layers consisting of Se-In-Se-In-Se 10 and Se-InIn-Se, 7 respectively, are formed. These anisotropic bonding characteristics, including strong intralayer covalent bonding and weak interlayer van der Waals interactions, give rise to highly 25 anisotropic optical, electrical, and thermal properties.…”

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A new crystal: layer-structured rhombohedral In₃Se₄

et al. 2014

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A new layer-structured rhombohedral In 3 Se 4 crystal was synthesized by a facile and mild solvothermal method. Detailed structural and chemical characterizations using transmission electron microscopy, coupled with synchrotron X-ray diffraction analysis and Rietveld refinement, indicate that In 3 Se 4 crystallizes in a layered rhombohedral structure with lattice parameters of a = 3.964 ± 0.002 Å and c = 10 39.59 ± 0.02 Å and a space group: R ̅ m, and with a layer composition of Se-In-Se-In-Se-In-Se. The theoretical modeling and experimental measurements indicate that the In 3 Se 4 is a self-doped n-type semiconductor. This study not only enriches the understanding on crystallography of indium selenide crystals, but also paves a way in the search for new semiconducting compounds.

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“…Indeed, this transition can be used to measure the melting points of individual nanowires as shown for phase change materials, such as GeTe and In 2 Se 3 . [22,23] …”

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Thermal Breakdown of ZnTe Nanowires

et al. 2011

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As the applications for inorganic nanowires continuously grow, studies on the stability of these structures under high electrical/thermal stress conditions are needed. ZnTe nanowires are grown by the vapor-liquid-solid technique and their breakdown under Joule heating is studied through in situ monitoring in a transmission electron microscope (TEM). The experimental setup, consisting of a scanning tunneling microscope (STM) and a movable piezotube inside the TEM, allows the manipulation of a single nanowire. A voltage applied to the STM tip in contact with a ZnTe nanowire leads to the breakdown of the nanowire into Zn and Te particles or balls which is observed in real time. These balls grow by Ostwald ripening, rendering the surface morphology of the ZnTe nanowire progressively rough. Diffraction patterns along the stem of the wire after the partial breakdown showed substantially smaller lattice spacing compared to 0.35 nm for pristine ZnTe nanowires.

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III-VI compound semiconductor indium selenide (In2Se3) nanowires: Synthesis and characterization

Cited by 94 publications

References 18 publications

Vacancy ordering and lithium insertion in III2VI3 nanowires

Vacancy ordering and lithium insertion in III2VI3 nanowires

A new crystal: layer-structured rhombohedral In₃Se₄

Thermal Breakdown of ZnTe Nanowires

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III-VI compound semiconductor indium selenide (In2Se3) nanowires: Synthesis and characterization

Cited by 94 publications

References 18 publications

Vacancy ordering and lithium insertion in III2VI3 nanowires

Vacancy ordering and lithium insertion in III2VI3 nanowires

A new crystal: layer-structured rhombohedral In3Se4

Thermal Breakdown of ZnTe Nanowires

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A new crystal: layer-structured rhombohedral In₃Se₄