III-V-on-silicon mode-locked lasers with 1-GHz line spacing for dual-comb spectroscopy

Mode-locked lasers find their use in a large number of applications, for instance, in spectroscopic sensing, distance measurements, and optical communication. To enable widespread use of mode-locked lasers, their on-chip integration is desired. In recent years, there have been multiple demonstrations of monolithic III-V and heterogeneous III-V-on-silicon mode-locked lasers. However, the pulse energy, noise performance, and stability of these mode-locked lasers are limited by the relatively high linear and nonlinear waveguide loss, and the high temperature sensitivity of said platforms. Here, we demonstrate a heterogeneous III-V-on-silicon-nitride (III-V-on-SiN) electrically pumped mode-locked laser. SiN’s low waveguide loss, negligible two-photon absorption at telecom wavelengths, and small thermo-optic coefficient enable low-noise mode-locked lasers with high pulse energies and excellent temperature stability. Our mode-locked laser emits at a wavelength of 1.6 μm, has a pulse repetition rate of 3 GHz, a high on-chip pulse energy of ≈2 pJ, a narrow RF linewidth of 400 Hz, and an optical linewidth <1 MHz. The SiN photonic circuits are fabricated on 200 mm silicon wafers in a CMOS pilot line and include an amorphous silicon waveguide layer for efficient coupling from the SiN to the III-V waveguide. The III-V integration is done by micro-transfer-printing, a technique that enables the transfer of thin-film devices in a massively parallel manner on a wafer scale.

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III-V-on-silicon mode-locked lasers with 1-GHz line spacing for dual-comb spectroscopy

Abstract: We demonstrate dual-comb interferometry and spectroscopy with a III-V-on-silicon passively mode-locked laser of 1-GHz repetition rate and 1-THz span. We heterodyne the on-chip device with an electro-optic modulator comb for initial assessment.

Cited by 2 publications

References 3 publications

Integrated optical frequency comb technologies

Integrated optical frequency comb technologies

High-pulse-energy III-V-on-silicon-nitride mode-locked laser

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