III/V-on-lithium niobate amplifiers and lasers

Beeck, Camiel Op de; Mayor, Felix M.; Cuyvers, Stijn; Poelman, Stijn; Herrmann, Jonathan; Atalar, Okan; McKenna, Timothy P.; Haq, Bahawal; Jiang, Wentao; Witmer, Jeremy D.; Roelkens, Günther; Safavi-Naeini, Amir H.; Laer, Raphaël Van; Kuyken, Bart

doi:10.1364/optica.438620

Cited by 80 publications

(37 citation statements)

References 8 publications

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“…These results show that highly tunable infrared sources can be implemented on chip using the thin-film lithium niobate platform, adding to the increasingly available set of functionalities in this platform [18], and complementing the recent demonstration of a tunable heterogeneously integrated near-infrared laser [19].…”

Section: Fig 2 Measurements Of On-chip Doubly-resonantmentioning

confidence: 54%

Widely-tunable optical parametric oscillator in lithium niobate nanophotonics

Ledezma¹,

Roy²,

Costa³

et al. 2022

Preprint

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Widely-tunable coherent sources in nanophotonics are desirable for a multitude of applications ranging from communications to sensing. The mid-infrared spectral region (wavelengths beyond 2 µm) is particularly important for applications relying on molecular spectroscopy. Among tunable sources, optical parametric oscillators typically offer some of the broadest tuning ranges; however, their implementations in nanophotonics have been limited to modest tuning ranges and only at visible and near-infrared wavelengths. Here, we surpass these limits by demonstrating octavespanning tunable optical parametric oscillators in dispersion-engineered periodically-poled lithium niobate nanophotonics. With a pump wavelength near 1 µm, we generate output wavelengths tunable from 1.53 µm to 3.25 µm, including common telecommunication bands and into the midinfrared. Our results enable opportunities for numerous integrated photonic applications requiring compact tunable sources.

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Section: Fig 2 Measurements Of On-chip Doubly-resonantmentioning

confidence: 54%

Widely-tunable optical parametric oscillator in lithium niobate nanophotonics

Ledezma¹,

Roy²,

Costa³

et al. 2022

Preprint

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“…The Kerr effect is the change in refractive index of a material due to its third order nonlinearity in susceptibility, χ (3) . In the presence of two electric fields, the nonlinear po-larization corresponding to this term is given by P (3)…”

Section: Theory Of Operationmentioning

confidence: 99%

“…As the isolation devices depends on Q 2 , the mode volume, the nonlinear refractive index, and the input power, it is critical to implement devices with a material that can support high quality microresonators, has an appreciable χ (3) , and can handle very high optical intensities without incurring loss. Here, we demonstrate the integrated isolators using silicon nitride as a model system, as it has become one of the most prominent platforms for integrated nonlinear photonics [1].…”

Section: Device Integration and Measurementmentioning

confidence: 99%

“…The effort to integrate high-performance optical systems on-chip has made tremendous progress in recent years. Advancements in ultra-low-loss photonic platforms [1], nonlinear photonics [2], and heterogenous material integration [1,3] have enabled fully integrated turnkey frequency comb sources [1,4], on-chip lasers with Hertz linewidth [5], Tbps communications on-chip [6,7], on-chip optical amplifiers [8], and much more. While these systems will continue to improve, a lack of integrated optical isolation limits their performance.…”

Section: Introductionmentioning

confidence: 99%

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Integrated Passive Nonlinear Optical Isolators

White¹,

Ahn²,

Gasse³

et al. 2022

Preprint

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Fiber and bulk-optical isolators are widely used to stabilize laser cavities by preventing unwanted feedback. However, their integrated counterparts have been slow to be adopted. While several strategies for onchip optical isolation have been realized, these rely on either integration of magneto-optic materials or high frequency modulation with acoustooptic or electro-optic modulators. Here, we demonstrate an integrated approach for passively isolating a continuous wave laser using the intrinsically non-reciprocal Kerr nonlinearity in ring resonators. Using silicon nitride as a model platform, we achieve single ring isolation of 17-23 dB with 1.8-5.5 dB insertion loss, and a cascaded ring isolation of 35 dB with 5 dB insertion loss. Employing these devices, we demonstrate hybrid integration and isolation with a semi-conductor laser chip.

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“…2 of 8 integrated in high-power lasers on a TFLN platform [16,17]. The on-chip Yb 3+ -doped waveguides have already been demonstrated on weakly guiding ion-diffused waveguides in Yb 3+ -doped bulk LN [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate

et al. 2022

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We report the fabrication and optical characterization of Yb3+-doped waveguide amplifiers (YDWA) on the thin film lithium niobate fabricated by photolithography assisted chemo-mechanical etching. The fabricated Yb3+-doped lithium niobate waveguides demonstrates low propagation loss of 0.13 dB/cm at 1030 nm and 0.1 dB/cm at 1060 nm. The internal net gain of 5 dB at 1030 nm and 8 dB at 1060 nm are measured on a 4.0 cm long waveguide pumped by 976 nm laser diodes, indicating the gain per unit length of 1.25 dB/cm at 1030 nm and 2 dB/cm at 1060 nm, respectively. The integrated Yb3+-doped lithium niobate waveguide amplifiers will benefit the development of a powerful gain platform and are expected to contribute to the high-density integration of thin film lithium niobate based photonic chip.

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III/V-on-lithium niobate amplifiers and lasers

Abstract: We demonstrate electrically pumped, heterogeneously integrated lasers on thin-film lithium niobate, featuring electro-optic wavelength tunability.

Cited by 80 publications

References 8 publications

Widely-tunable optical parametric oscillator in lithium niobate nanophotonics

Widely-tunable optical parametric oscillator in lithium niobate nanophotonics

Integrated Passive Nonlinear Optical Isolators

On-Chip Integrated Yb3+-Doped Waveguide Amplifiers on Thin Film Lithium Niobate

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