III-V detector technologies at Sofradir: Dealing with image quality

Nedelcu, Adrian; Bonvalot, Cyrille; Taalat, R.; Fantini, Jérôme; Colin, Thierry; Müller, P; Huet, O.; Dua, Lydie; Laurent, T.; Blin, Candice; Priol, A. Le; Coussement, J.; Bettiati, M.; Garabédian, P.

doi:10.1016/j.infrared.2018.09.027

Cited by 8 publications

(6 citation statements)

References 34 publications

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“…Because E z 2 is greatest near the cavity sidewall surfaces (See Figure 1D), depletion near the sidewalls could strongly degrade the responsivity. Because QWIPs are unipolar devices, surface passivation and prevention of oxidation have typically been considered unnecessary [26]. However, the observed drastic decrease in the responsivity only for etched detectors suggests the etched surfaces are limiting device performance.…”

Section: Resultsmentioning

confidence: 99%

“…Nonetheless, etched stripes are found to be the superior structure with higher D * due to their reduced I D . Surface effects such as depletion layers and etching damage have been considered insignificant for conventional QWIPs [26], but may have greater impact on metasurface QWIP performance because absorption is strongest at the cavity sidewalls and the etched surface areas are much larger. Appropriate sidewall surface treatments could therefore lead to further improvement in etched detector performance.…”

Section: Introductionmentioning

confidence: 99%

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Systematic studies for improving device performance of quantum well infrared stripe photodetectors

et al. 2020

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AbstractThe integration of quantum well infrared photodetectors with plasmonic cavities has allowed for demonstration of sensitive photodetectors in the mid-infrared up to room-temperature operating conditions. However, clear guidelines for optimizing device structure for these detectors have not been developed. Using simple stripe cavity detectors as a model system, we clarify the fundamental factors that improve photodetector performance. By etching semiconductor material between the stripes, the cavity resonance wavelength was expected to blue-shift, and the electric field was predicted to strongly increase, resulting in higher responsivity than unetched stripe detectors. Contrary to our predictions, etched stripe detectors showed lower responsivities, indicating surface effects at the sidewalls and reduced absorption. Nevertheless, etching led to higher detectivity due to significantly reduced detector dark current. These results suggest that etched structures are the superior photodetector design, and that appropriate sidewall surface treatments could further improve device performance. Finally, through polarization and incidence angle dependence measurements of the stripe detectors, we clarify how the design of previously demonstrated wired patch antennas led to improved device performance. These results are widely applicable for cavity designs over a broad range of wavelengths within the infrared, and can serve as a roadmap for improving next-generation infrared photodetectors.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Systematic studies for improving device performance of quantum well infrared stripe photodetectors

et al. 2020

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“…We envision that through the same concept easy in situ and large-scale heterostacking of multiple 2D materials could be achievable, with hundreds of 2D materials and their 2D alloys virtually accessible by the PLD approach. This large playground for heterostructure engineering with 2D materials unlocked by the PLD approach is reminiscent of the successful applicative exploitation of III–V semiconductor families. − Our work is thus a step toward the fabrication of advanced transport functions modulated by the insertion and combination of the large families of 2D materials now being uncovered and characterized.…”

Section: Discussionmentioning

confidence: 99%

“…Two-dimensional semiconductors have been hailed as ultimately thin functional electronic materials, with potential applications for instance in electronics, optoelectronics, and spintronics. − Their assembly into heterostructures with atomic precision is expected to lead to a wealth of properties and device structures, − reminiscent of the successful exploitation of III–V semiconductor families. − Indeed, the precise band-gap landscape engineering allowed by 2D material stacking promises eased functional structure definition, including atomically defined quantum wells and vertical superlattices such as quantum cascades. This vision is fueled by the extremely large extension of 2D material families being now uncovered with fine modulation of their properties by their atomic composition (including doping and alloying), ,− adjacent crystallography angle control, , and proximity effects maximized by their atomic 2D geometry. − Illustratively, beyond elemental 2D materials such as silicene and phosphorene, large varieties of mono-, bi-, and trichalcogenides are identified and studied.…”

Section: Introductionmentioning

confidence: 99%

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

et al. 2021

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We present a growth process relying on pulsed laser deposition for the elaboration of complex van der Waals heterostructures on large scales, at a 400 °C CMOS-compatible temperature. Illustratively, we define a multilayer quantum well geometry through successive in situ growths, leading to WSe2 being encapsulated into WS2 layers. The structural constitution of the quantum well geometry is confirmed by Raman spectroscopy combined with transmission electron microscopy. The large-scale high homogeneity of the resulting 2D van der Waals heterostructure is also validated by macro- and microscale Raman mappings. We illustrate the benefit of this integrative in situ approach by showing the structural preservation of even the most fragile 2D layers once encapsulated in a van der Waals heterostructure. Finally, we fabricate a vertical tunneling device based on these large-scale layers and discuss the clear signature of electronic transport controlled by the quantum well configuration with ab initio calculations in support. The flexibility of this direct growth approach, with multilayer stacks being built in a single run, allows for the definition of complex 2D heterostructures barely accessible with usual exfoliation or transfer techniques of 2D materials. Reminiscent of the III–V semiconductors’ successful exploitation, our approach unlocks virtually infinite combinations of large 2D material families in any complex van der Waals heterostructure design.

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“…Dark current mastering is crucial for the production of both high quality FPA SWIR detectors for low light level imaging and for the production of uncooled FPA SWIR detectors intended to machine vision. It has been shown in a previous article [7] that dark current has direct impact on several key parameters of the FPA (dynamical resistance, spatial noise …).…”

Section: Dark Currentmentioning

confidence: 95%

Small pixel pitch developments in the short wave infrared range at Lynred

Colin,

Aufranc,

Fantini

et al. 2023

Infrared Technology and Applications XLIX

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The short wave infrared (SWIR) spectral band is an emerging domain thanks to its large potential. Close to VISible/Near Infrared wavelengths, SWIR images interpretation is made easier for the users. In this spectral region, new opportunities can be found in several fields of applications such as defense and security (night vision, active imaging), space (earth observation), transport (automotive safety), or industry (nondestructive process control, food and plastic sorting). In the frame of this paper, the development of a small pitch InGaAs technology for the SWIR band is described. The objective is to fuel an increase in focal plane arrays (FPA) resolution with the development of a10μm pitch process. A specific Read Out Integrated Circuit (ROIC) has been designed to address a high frame rate and various functions like the selection of lines or specific windowing. The ROIC exhibits 3 different gains. A full set of electro-optical characterizations for a VGA 10μm pitch focal plane array is presented.

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III-V detector technologies at Sofradir: Dealing with image quality

Cited by 8 publications

References 34 publications

Systematic studies for improving device performance of quantum well infrared stripe photodetectors

Systematic studies for improving device performance of quantum well infrared stripe photodetectors

Band-Gap Landscape Engineering in Large-Scale 2D Semiconductor van der Waals Heterostructures

Small pixel pitch developments in the short wave infrared range at Lynred

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