III–Nitride UV Devices

Abstract

The need for efficient, compact and robust solid-state UV optical sources and sensors had stimulated the development of optical devices based on III–nitride material system. Rapid progress in material growth, device fabrication and packaging enabled demonstration of high efficiency visible-blind and solar-blind photodetectors, deep-UV light-emitting diodes with emission from 400 to 250 nm, and UV laser diodes with operation wavelengths ranging from 340 to 350 nm. Applications of these UV optical devices include flame sensing; fluorescence-based biochemical sensing; covert communications; air, water and food purification and disinfection; and biomedical instrumentation. This paper provides a review of recent advances in the development of UV optical devices. Performance of state-of-the-art devices as well as future prospects and challenges are discussed.

Built-in field control in alloyedc-plane III-N quantum dots and wells

“…[3][4][5] UV radiation sources (E g > 3:4 eV) 1 are of interest for various applications such as optical storage, medical diagnostics and treatment, and sterilization processes. 6,7 In this spectral range, nitride-based structures might be either a good candidate for the replacement of traditional low-efficiency devices, or the only available solution in environments where it is not possible to implement any alternative approach. [6][7][8] Although there have been great improvements in the quality of nitride-based materials and structures during the past two decades, there is still need for further improvement toward the goal of high efficiency devices.…”

“…6,7 In this spectral range, nitride-based structures might be either a good candidate for the replacement of traditional low-efficiency devices, or the only available solution in environments where it is not possible to implement any alternative approach. [6][7][8] Although there have been great improvements in the quality of nitride-based materials and structures during the past two decades, there is still need for further improvement toward the goal of high efficiency devices. 3,9 Even though it is possible under certain conditions to grow III-N materials in the zinc-blende phase, 10,11 they usually crystallize in the wurtzite structure.…”

Ultraviolet light emitting diodes

“…Some aspects of the recent development of UV LEDs are already summarized in a few review papers [13][14][15]. This paper is aimed at the review of the main applications of UV LEDs and the currently key problems in development of wide-band-gap III-nitride materials and structures for these UV emitters.…”

Damage of light-emitting diodes induced by high reverse-bias stress

“…Since the successful commercialization of GaN-based lightemitting diodes (LED), GaN-based LEDs have been applied extensively in several different fields [1][2][3][4][5][6]. Comparing to the previously extensively used devices such as GaAsP, AlGaAs or AlGaInP LEDs that are grown on lattice-matched conducting substrates, most GaN-based LEDs are heteroepitaxially grown on lattice-mismatched insulating substrates.…”