III-nitride ultraviolet, blue and green LEDs with SiO 2 photonic crystals fabricated by UV-nanoimprint lithography

Hu, Xiaolong; Wen, Rulian; Qi, Zhao-yi; Wang, Hong

doi:10.1016/j.mssp.2018.01.024

Cited by 16 publications

(7 citation statements)

References 25 publications

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“…A potential technology for significantly increasing light extraction involves the use of the photonic crystals. The highest light output power (LOP) enhanced ratio is 40.5% by using some SiO2 photonic crystals [17]. X. Tang et al also prepared the nano-scale SiO2 arrays by the laser interference lithography (LIL) with the highest LOP enhanced ratios of 40% [18].…”

Section: Introductionmentioning

confidence: 99%

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Wen

Lin

Yang³

et al. 2023

IEEE Photonics J.

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In order to improve the light extraction efficiency (LEE) of a plane AlGaAs-based LED (Device A), three different surface periodic micron-scale arrays, micron pillar (Device B), micron truncated cone (Device C) and micron cone (Device D), are prepared by the conventional ultra-violet (UV) lithography. The morphology of the three devices B -D is characterized by a scanning electron microscopy (SEM). The periodic array structures improve the photon escape probabilities. In comparison to the Device A, the light output powers (LOPs) of the Devices B -D increase 54.0%, 145.5% and 157.2% at an injection current of 500 mA, respectively. Luminous uniformity of the periodic micron-scale array LEDs is better. Moreover, we use the Monte Carlo ray-tracing method to simulate the LEE of the four devices.

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Section: Introductionmentioning

confidence: 99%

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Wen

Lin

Yang³

et al. 2023

IEEE Photonics J.

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“…39–42 Beyond that, using photonic crystals (PCs) has also been proved to be another efficient method to effectively improve the light-harvesting capabilities by light scattering or reflection. 43–45 The commonly synthesized three-dimensional PCs generally consist of repeating uniformly sized microspheres, such as SiO 2 opal PCs 46,47 and TiO 2 inverse opal PCs. 48 As a result of a periodic structure in space, the photonic bandgap (PBG) effect and slow photon effect can improve the light-harvesting ability of photocatalysts greatly as reported in previous studies.…”

Section: Introductionmentioning

confidence: 99%

Ternary-structured graphite carbon nitride quantum dots/TiO₂ nanotubes/3D SiO₂ photonic crystals for enhanced dye photodegradation

Jiang

Wang

et al. 2023

New J. Chem.

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“…The PDMS membrane was then applied to the surface of the LED chip to enhance the electroluminescence (EL) intensity. Hu et al [ 39 ] reported SiO 2 with a PC structure of square-lattice on the ITO window layer of GaN-based LEDs by UV-nanoimprint lithography. LEDs with the SiO 2 PC structure show a low turn-on voltage and high light output power.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

2021

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We fabricated the photonic-crystal-structured p-GaN (PC-structured p-GaN) nanorods using the modified polystyrene nanosphere (PS NS) lithography method for InGaN/GaN green light-emitting diodes (LEDs) to enhance the light extraction efficiency (LEE). A modified PS NS lithography method including two-times spin-coating processes and the post-spin-coating heating treatment was used to obtain a self-assembly close-packed PS NS array of monolayer as a mask and then a partially dry etching process was applied to PS NS, SiO2, and p-GaN to form PC-structured p-GaN nanorods on the InGaN/GaN green LEDs. The light output intensity and LEE of InGaN/GaN green LEDs with the PC-structured p-GaN nanorods depend on the period, diameter, and height of PC-structured p-GaN nanorods. RSoft FullWAVE software based on the three-dimension finite-difference time-domain (FDTD) algorithm was used to calculate the LEE of InGaN/GaN green LEDs with PC-structured p-GaN nanorods of the varied period, diameter, and height. The optimal period, diameter, and height of PC-structured p-GaN nanorods are 150, 350, and 110 nm. The InGaN/GaN green LEDs with optimal PC-structured p-GaN nanorods exhibit an enhancement of 41% of emission intensity under the driving current of 20 mA as compared to conventional LED.

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III-nitride ultraviolet, blue and green LEDs with SiO 2 photonic crystals fabricated by UV-nanoimprint lithography

Cited by 16 publications

References 25 publications

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Ternary-structured graphite carbon nitride quantum dots/TiO₂ nanotubes/3D SiO₂ photonic crystals for enhanced dye photodegradation

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

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III-nitride ultraviolet, blue and green LEDs with SiO 2 photonic crystals fabricated by UV-nanoimprint lithography

Cited by 16 publications

References 25 publications

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Enhanced Light Extraction of Infrared AlGaAs-Based LEDs With Micron Array

Ternary-structured graphite carbon nitride quantum dots/TiO2 nanotubes/3D SiO2 photonic crystals for enhanced dye photodegradation

Investigation of Photonic-Crystal-Structured p-GaN Nanorods Fabricated by Polystyrene Nanosphere Lithography Method to Improve the Light Extraction Efficiency of InGaN/GaN Green Light-Emitting Diodes

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Ternary-structured graphite carbon nitride quantum dots/TiO₂ nanotubes/3D SiO₂ photonic crystals for enhanced dye photodegradation