III-nitride nanowires for solar light harvesting: A review

Chatterjee, Uddipta; Park, Ji‐Hyeon; Um, Dae‐Young; Lee, Cheul-Ro

doi:10.1016/j.rser.2017.05.136

Cited by 38 publications

(15 citation statements)

References 247 publications

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“…18a-c). The third-generation solar cells with III-V semiconducting are highly promising to overcome Shockley-Queisser efficiency limit [249][250][251], and a PCE of 8.8% was achieved by simply stacking graphene and GaAs nanowires into a vertical Schottky junction. [252] The heterostructures with other types of 1D semiconductors (e.g., CNT [253], CdSe [254,255], ZnSe [256], etc) were also exploited for solar cells, yielding a limited PCE less than 10%.…”

Section: (B) Photovoltaic Devicesmentioning

confidence: 99%

Van der Waals heterostructures with one-dimensional atomic crystals

Qin

Wang

Zhen

et al. 2021

Progress in Materials Science

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As one of the well-defined classes of materials, one-dimensional (1D) materials and related heterostructures have aroused broad interest due to their unique physical properties and widespread applications over the past decades. The concept of van der Waals (vdW) heterostructure, which has gained great success in superlattice of 2D layered materials, can be also extended to heterostructures with 1D atomic crystals. Due to the less rigid requirement on lattice matching, versatility of foreign materials with different dimensionalities can be integrated with the 1D templates via non-covalent bonding. Such 1D vdW heterostructures are expected to exhibit intriguing physical properties and functionalities that cannot be realized in single-component 1D material.This review article aims to provide a succinct and critical survey of the emerging 1D vdW heterostructures. We start with an overview of the configuration and summarize the synthetic strategies of 1D vdW heterostructures. Next, we discuss their physical properties with emphasis on those originated from the unique structure-property relationship, including spatial confinement effect and phase transition, band structure and electrical properties, optical properties, thermal properties and environmental stability, and directional mass transport. The emerging applications of 1D vdW heterostructures in electronic, photonic, optoelectronic and energy storage fields are comprehensively overviewed. Last, we conclude with a brief perspective on the opportunities as well as challenges of vdW heterostructures with 1D atomic crystals.

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Section: (B) Photovoltaic Devicesmentioning

confidence: 99%

Van der Waals heterostructures with one-dimensional atomic crystals

Qin

Wang

Zhen

et al. 2021

Progress in Materials Science

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“…[32,33] Numerous works report the use of III-nitride semiconductor nanorods as building blocks in nanodevices, especially in optoelectronics where group III-nitrides are the front runners. Such devices include: nanolasers, [34] LEDs, [35] high electron mobility transistors (HEMTs), [36] nanosensors, [37] solar cells, [38] and nanogenerators. [39] These advances supported the intensive research dedicated to growth and development of III-nitride semiconductor nanorods in the past years.…”

Section: One-dimensional Nanostructuresmentioning

confidence: 99%

Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

Serban¹

2018

Linköping Studies in Science and Technology. Dissertations

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“…Nanostructuring these materials not only offers a route to improve the crystal quality and increase the light extraction 6,7 , but also provides an opportunity for further control of the overall device optoelectronic properties (e.g. wavelength range, lasing, doping) 8,9 , enabling novel functionalities and applications such as piezoelectric nanogenerators 10 , solar light harvesting 11 , water splitting 12 , single photon sources 13 , or intersubband devices 14 .…”

Section: Introductionmentioning

confidence: 99%

Displacement Talbot lithography for nano-engineering of III-nitride materials

et al. 2019

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Nano-engineering III-nitride semiconductors offers a route to further control the optoelectronic properties, enabling novel functionalities and applications. Although a variety of lithography techniques are currently employed to nano-engineer these materials, the scalability and cost of the fabrication process can be an obstacle for large-scale manufacturing. In this paper, we report on the use of a fast, robust and flexible emerging patterning technique called Displacement Talbot lithography (DTL), to successfully nano-engineer III-nitride materials. DTL, along with its novel and unique combination with a lateral planar displacement (D2TL), allow the fabrication of a variety of periodic nanopatterns with a broad range of filling factors such as nanoholes, nanodots, nanorings and nanolines; all these features being achievable from one single mask. To illustrate the enormous possibilities opened by DTL/D2TL, dielectric and metal masks with a number of nanopatterns have been generated, allowing for the selective area growth of InGaN/GaN core-shell nanorods, the top-down plasma etching of III-nitride nanostructures, the top-down sublimation of GaN nanostructures, the hybrid top-down/bottom-up growth of AlN nanorods and GaN nanotubes, and the fabrication of nanopatterned sapphire substrates for AlN growth. Compared with their planar counterparts, these 3D nanostructures enable the reduction or filtering of structural defects and/or the enhancement of the light extraction, therefore improving the efficiency of the final device. These results, achieved on a wafer scale via DTL and upscalable to larger surfaces, have the potential to unlock the manufacturing of nano-engineered III-nitride materials.

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III-nitride nanowires for solar light harvesting: A review

Cited by 38 publications

References 247 publications

Van der Waals heterostructures with one-dimensional atomic crystals

Van der Waals heterostructures with one-dimensional atomic crystals

Self-Assembled and Selective-Area Growth of Group III-Nitride Semiconductor Nanorods by Magnetron Sputter Epitaxy

Displacement Talbot lithography for nano-engineering of III-nitride materials

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