2005
DOI: 10.1117/12.591218
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III-nitride LEDs with photonic crystal structures

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Cited by 23 publications
(17 citation statements)
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“…Extraction efficiencies for unencapsulated LEDs can be increased as well using photonic crystal (PC) structures as e.g. described by J. Wierer et al [5] Angular beam shaping using photonic crystals (see Figure 7) can further increase the effective luminance, useful for projection, by controlling the angular emission pattern. But close attention should be paid to the trade-offs between the overall extraction efficiency versus the flux within the target cone.…”
Section: / --mentioning
confidence: 98%
See 1 more Smart Citation
“…Extraction efficiencies for unencapsulated LEDs can be increased as well using photonic crystal (PC) structures as e.g. described by J. Wierer et al [5] Angular beam shaping using photonic crystals (see Figure 7) can further increase the effective luminance, useful for projection, by controlling the angular emission pattern. But close attention should be paid to the trade-offs between the overall extraction efficiency versus the flux within the target cone.…”
Section: / --mentioning
confidence: 98%
“…4 Better optical coupling efficiency with Flip Chip designs. 5 Better reliability at high currents and junction temperatures.…”
Section: Introductionmentioning
confidence: 98%
“…A number of research papers have been published, suggesting ways to improve the LEE or the external quantum efficiency in LEDs. Random surface texturing or roughening [3][4][5], periodic surface modification in the form of nanopyramids [6] or surface gratings [7], and exploiting photonic crystals (PCs) [8][9][10][11][12][13] or surface plasmon resonance [14,15] are some of the interesting approaches aimed at increasing the LEE of LEDs. Interesting reports [16] are also made on improving the efficiency by using top transmission gratings only.…”
Section: Introductionmentioning
confidence: 99%
“…The total internal reflection leads to narrow escape cone of only ~23.5 0 with escape probability of only ~ 4 % from top surface of the LEDs device, due to the optical modes being trapped inside the semiconductor. Several approaches have been implemented to improve the light extraction efficiency of the InGaN QW LEDs, such as: die-shaping approach [7,8], surface roughening approach [9][10][11], oblique mesa sidewall approach [12], photonic crystals approach [13][14][15][16], nano-pyramid approach [17], sapphire microlenses approach [18] and grading refractive indices between semiconductor/air interface with planar material approach [19][20][21]. The use of die-shaped LEDs devices results in promising device performance, but the high cost associated with die shaping technique remains an important limitation.…”
Section: Introductionmentioning
confidence: 99%