Handbook of II-VI Semiconductor-Based Sensors and Radiation Detectors 2023
DOI: 10.1007/978-3-031-24000-3_16
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II–VI Semiconductor-Based Optical Temperature Sensors

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“…[ 1–4 ] CdS nanostructure‐based photodetectors are gaining popularity due to their increased photosensitivity. [ 5–8 ] However, during the synthesis process, the creation of local non‐stoichiometric conditions, characterized by the presence of point defects such as sulfur vacancies (V s ) and cadmium interstitials (Cd i ), occurs within the film. [ 3,9–11 ] These defects have the capacity to influence the photo‐conducting properties of bulk CdS.…”
Section: Introductionmentioning
confidence: 99%
“…[ 1–4 ] CdS nanostructure‐based photodetectors are gaining popularity due to their increased photosensitivity. [ 5–8 ] However, during the synthesis process, the creation of local non‐stoichiometric conditions, characterized by the presence of point defects such as sulfur vacancies (V s ) and cadmium interstitials (Cd i ), occurs within the film. [ 3,9–11 ] These defects have the capacity to influence the photo‐conducting properties of bulk CdS.…”
Section: Introductionmentioning
confidence: 99%