IAS '97. Conference Record of the 1997 IEEE Industry Applications Conference Thirty-Second IAS Annual Meeting
DOI: 10.1109/ias.1997.629064
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IGCT-a new emerging technology for high power, low cost inverters

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Cited by 110 publications
(32 citation statements)
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“…The IGCT is a promising switching device for use in CSC based high power applications. This device has excellent features such as high voltage and current ratings, high reverse voltage blocking capability, low snubber requirements, lower gate drive power requirement and higher switching speed than GTO [9]. Hence, the problem of higher conduction losses in the switching elements due to the series connection of diodes with IGBTs in the CSC based DVR can be eliminated by using either GTO or IGCT switches.…”
Section: A Technical Comparison Between the Vsc And Csc Topologiesmentioning
confidence: 99%
“…The IGCT is a promising switching device for use in CSC based high power applications. This device has excellent features such as high voltage and current ratings, high reverse voltage blocking capability, low snubber requirements, lower gate drive power requirement and higher switching speed than GTO [9]. Hence, the problem of higher conduction losses in the switching elements due to the series connection of diodes with IGBTs in the CSC based DVR can be eliminated by using either GTO or IGCT switches.…”
Section: A Technical Comparison Between the Vsc And Csc Topologiesmentioning
confidence: 99%
“…Furthermore, all the switching problems faced in the early stages of CSC development can be overcome by employing trilevel switching scheme which has become a standard technique in the control of CSC [6]. (iii) Integrated Gate Commutated Thyristor (IGCT) having high ratings, high reverse voltage blocking capability, low snubber requirements, lower gate-drive power requirements than GTO, and also has higher switching speed than GTO, is the optimum combination of the characteristics demanded in high-power applications [7]. Using the state-of-the-art technology of the semiconductor switches, there will be no need for the series diode in the CSC topology anymore.…”
Section: Introductionmentioning
confidence: 99%
“…IGCT(Integrated Gate Commutated Thyristor) has been introduced as a much advanced GTO to the industry of high power and medium voltage application in late 90s [6]. Since then, the performance and electrical rating of IGCT has increased dramatically and today 4.5-, 5.5-, 6-, 6.5-, 10-kV IGCTs are available [7], [8].…”
mentioning
confidence: 99%