IGBT modules robustness during turn-off commutation

Busatto, G.; Abbate, Carmine; Abbate, B.; Iannuzzo, Francesco

doi:10.1016/j.microrel.2008.07.027

Cited by 12 publications

(6 citation statements)

References 5 publications

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“…The depicted problem with overcurrent leading to a thermal runway and avalanche breakdown is supposed to be actual for DC-DC Buck-Boost converters, especially on the border between Buck and Boost modes of operation. The same suggestions can be confirmed from the experimental data presented in [26].…”

Section: Introductionsupporting

confidence: 82%

“…Potentially, Buck-Boost DC-DC transformerless converters can face short-circuit failure modes under certain conditions. Sources [21][22][23][24][25][26] offer significant information in this direction as follows: IGBT structural behavior under short-circuit [21]; breakdown and thermal runaway mechanisms leading to destructive failure [22]; damages from electrostatic discharge [23]; IGBTs' mechanical stress under short-circuit conditions [24]; turn-off failure mechanism [25]; robustness of IGBT modules during turn-off commutation.…”

Section: Introductionmentioning

confidence: 99%

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A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

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Section: Introductionsupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

et al. 2020

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“…It is worth pointing out the junction temperature (Tj) is probably the most critical parameter responsible for IGBT converters failures. For instance, the phenomena of current constriction and thermal runaway, which cause IGBT modules failures during heavy loads and short-circuits, are commonly connected with regenerative effects involving high Tj [6]. Additionally, the final destruction coming from various failure-triggering events, (e.g.…”

Section: Introductionmentioning

confidence: 99%

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

Iannuzzo

Wang

et al. 2015

2015 Annual Reliability and Maintainability Symposium (RAMS)

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A novel Insulated Gate Bipolar Transistor (IGBT) electrothermal modeling approach involving PSpice and ANSYS/Icepak with both high accuracy and simulation speed has been presented to study short-circuit of a 1.7 kV/1 kA commercial IGBT module. The approach successfully predicts the current and temperature distribution inside the chip of power IGBT modules. The simulation result is further validated using a 6 kA/1.1 kV non-destructive tester. The experimental validation demonstrates the modeling approach's capability for reliable design of high power IGBT power modules given electrical/thermal behavior under severe conditions.

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“…First, the stray inductance of the circuit provokes over/under voltages during transients and should, therefore, be minimized [2], [3]. The stray inductance also increases the turn-on time of the protection switches.…”

Section: Introductionmentioning

confidence: 99%

Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester

Smirnova

Pyrhönen

Iannuzzo

et al. 2014

2014 16th European Conference on Power Electronics and Applications

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Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester Smirnova, Liudmila; Pyrhönen, Juha ; Iannuzzo, Francesco; Wu, Rui; Blaabjerg, Frede General rightsCopyright and moral rights for the publications made accessible in the public portal are retained by the authors and/or other copyright owners and it is a condition of accessing publications that users recognise and abide by the legal requirements associated with these rights.? Users may download and print one copy of any publication from the public portal for the purpose of private study or research. ? You may not further distribute the material or use it for any profit-making activity or commercial gain ? You may freely distribute the URL identifying the publication in the public portal ? Take down policyIf you believe that this document breaches copyright please contact us at vbn@aub.aau.dk providing details, and we will remove access to the work immediately and investigate your claim. AbstractDesign of a Non-Destructive Test (NDT) set-up for short-circuit tests of 1.7 kV, 1 kA IGBT modules is discussed in this paper. The test set-up allows achieving short-circuit current up to 10 kA. The important objective during the design of the test set-up is to minimize the parasitic inductance and assure equal current sharing among the parallel connected devices. Achieving of a low inductance level is very challenging due to the current and voltage ratings, the presence of series and parallel protection systems and the required access for a thermal camera. The parasitic extractor Ansys Q3D is used to estimate the parasitic inductances during the design. A new concept of round-shaped, low inductive busbars for an NDT set-up is proposed. Simulation results verified that both reduction of overall inductance and good uniformity in current sharing among parallel devices are achieved by utilizing a circular symmetry. Experimental validation of the simulation was performed using a preliminary set-up. Further, this concept can be implemented in the design of the busbars for the power converters, where the parallel connection of the switching devices is applied to obtain higher current levels.

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IGBT modules robustness during turn-off commutation

Cited by 12 publications

References 5 publications

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles

Electro-thermal modeling of high power IGBT module short-circuits with experimental validation

Round busbar concept for 30 nH, 1.7 kV, 10 kA IGBT non-destructive short-circuit tester

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