IEEE Electron Device Letters

Guarin, F; Saha, Samar K.; Past, Junior; Meyyappan, M.; Swart, Jacobus W.; Treasurer, S Iyer; Wang, A; Past, Senior; Berger, Paul R.; Bhat, Navakanta; Booth, R.; Burghatz, J; Souza, M De; Farooq, Mian Usman; Fay, Patrick; Gutiérrez, E; Huang, Ran; Ikeda, Satoshi; Iñiguez, Benjamı́n; Ishimaru, K.; Lilley, C; Misra, D.; Nathan, Arokia; Nehrer, W; Polavarapu, M; Saxena, Manoj; Sood, S; Velez, C; Zhao, B.; Members, Ex-Officio; Liu, T.-J; Ren, Tianhua; Radhakrishnan, M.; Todi, R; Dallessase, J; Eneman, Geert; Ng, W.; Varshney, Umesh; Guo, Xiaojun; Mahapatra, Samiran; Paoloni, Claudio; Vasi, J.; Östling, Mikael; Eds, G Ghione; Skowrenski, James; Ús, Jes; Alamo, Jesús A. del; Egawa, Takashi; Jessen, Gregg H.; Jefferies, James; Kinsner, Witold; Grosz, Francis; Activities, Geographic; Fish, Robert; Liu, Association; Coughlin, Thomas; Jindal, Renuka; Welby, Stephen; Siegert, Thomas; Administration, Business; Cozin, Julie; Governance, Corporate; Hourican, Donna; Moesch, Jamie; Muirhead, Sohia; Brantley, Chris; Cherif, Ieee-Usa; Hawkins, Karen; Jankowski, Cecelia; Förster, Michael; Melley, Dawn; Lisankie, Kevin; Tuohy, Peter; Cichocki, Jeffrey; Khinvasara, Neelam; Perry, Christopher

doi:10.1109/led.2019.2920785

Impact of Gate Overlap Length Modulation on Electrical Characteristics and Subthreshold Swing in Nanosheet TFETs with Varying Tunneling Mechanisms

Zhong

¹

,

Tai

²

,

Lin

³

2024

2024 IEEE 17th International Conference on Solid-State &Amp;amp; Integrated Circuit Technology (ICSICT)

0

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Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

A new block refresh concept for SOI floating body memories

Fazan

¹

,

Okhonin

²

,

Nagoga

³

2003

2003 IEEE International Conference on Robotics and Automation (Cat No 03CH37422) SOI-03)

11

0

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Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

Industry Examples at the State-of-the-Art

Joseph¹,

Dunn²

2007

Fabrication of SiGe HBT BiCMOS Technology

0

Get access via publisher Add to dashboard Cite

Exaggerated anticipatory anxiety is common in social anxiety disorder (SAD). Neuroimaging studies have revealed altered neural activity in response to social stimuli in SAD, but fewer studies have examined neural activity during anticipation of feared social stimuli in SAD. The current study examined the time course and magnitude of activity in threat processing brain regions during speech anticipation in socially anxious individuals and healthy controls (HC). Method Participants (SAD n = 58; HC n = 16) underwent functional magnetic resonance imaging (fMRI) during which they completed a 90s control anticipation task and 90s speech anticipation task.

IEEE Electron Device Letters

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Cited by 5 publications

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Impact of Gate Overlap Length Modulation on Electrical Characteristics and Subthreshold Swing in Nanosheet TFETs with Varying Tunneling Mechanisms

Impact of Gate Overlap Length Modulation on Electrical Characteristics and Subthreshold Swing in Nanosheet TFETs with Varying Tunneling Mechanisms

A new block refresh concept for SOI floating body memories

Industry Examples at the State-of-the-Art

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