Identification of ultra-thin molecular layers atop monolayer terraces in sub-monolayer organic films with scanning probe microscopy

Chiodini, Stefano; Dinelli, Franco; Martínez, Nicolás; Stefano, Donati; Albonetti, Cristiano

doi:10.1016/j.ultramic.2022.113598

Cited by 5 publications

(9 citation statements)

References 115 publications

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“…Water contact angle measurements have shown that the n -SiO x surfaces are not chemically clean and, as modeled in ref , airborne contaminants were possibly adsorbed flat onto the n -SiO x surface in order to equilibrate −OH groups. Topographic AFM images of Figure a (and in Supplementary Material) seem to confirm this model since no molecular aggregates are visible (or, at most, they are thinner than the AFM z sensitivity, i.e., 0.025 nm) . On the contrary, such molecules can be indirectly detectable by measuring the Skewness and Kurtosis of surfaces height distributions. − Both statistical parameters show a minimum at N ≈ 2.1 × 10 15 cm –3 , consistent with less adsorbed airborne contaminants which are, possibly, more closely related to the surface roughness with respect to other n -SiO x samples (see Supplementary Materials).…”

Section: Resultsmentioning

confidence: 60%

“…At a first glance, the surfaces of the n -SiO x samples have similar topographic images, composed of nanometric grains forming a smooth surface with a sub-nanometric roughness (see Figure a). Since topographic images were collected in air, a water layer ≈12 Å thick is adsorbed on the n -SiO x surface due to the RH (≈70%), and it mimics the surface roughness …”

Section: Resultsmentioning

confidence: 99%

“…Nowadays, their presence is observed through contact angle measurements of deviations in the water contact angle, hysteresis measurements, or as a carbonaceous layer atop the n -SiO x by XPS. Scanning probe microscopy measurements might be useful to visualize them directly, as chemically heterogeneous regions, or indirectly, through morphological analysis. ,, …”

Section: Discussionmentioning

confidence: 99%

“…The thickness of the n -SiO x (surface) layer is determined by the average roughness σ of the sample surface as measured by AFM and is obtained by averaging horizontal topographic profiles . By approximating the average topographic profile to a sinusoidal trace, σ is the average oscillation amplitude with respect to the mean level height . Accordingly, the thickness of the n -SiO x (surface) layer is 2·σ and, due to periodic oscillations, is composed of 50% of voids and 50% SiO 2 .…”

Section: Experimental and Methodsmentioning

confidence: 99%

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Native Silicon Oxide Properties Determined by Doping

Della Ciana,

Kovtun,

Summonte

et al. 2023

Langmuir

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The physico-chemical properties of native oxide layers, spontaneously forming on crystalline Si wafers in air, can be strictly correlated to the dopant type and doping level. In particular, our investigations focused on oxide layers formed upon air exposure in a clean room after Si wafer production, with dopant concentration levels from ≈10 13 to ≈10 19 cm −3 . In order to determine these correlations, we studied the surface, the oxide bulk, and its interface with Si. The surface was investigated using the contact angle, thermal desorption, and atomic force microscopy measurements which provided information on surface energy, cleanliness, and morphology, respectively. Thickness was measured with ellipsometry and chemical composition with X-ray photoemission spectroscopy. Electrostatic charges within the oxide layer and at the Si interface were studied with Kelvin probe microscopy. Some properties such as thickness, showed an abrupt change, while others, including silanol concentration and Si intermediate-oxidation states, presented maxima at a critical doping concentration of ≈2.1 × 10 15 cm −3 . Additionally, two electrostatic contributions were found to originate from silanols present on the surface and the net charge distributed within the oxide layer. Lastly, surface roughness was also found to depend upon dopant concentration, showing a minimum at the same critical dopant concentration. These findings were reproduced for oxide layers regrown in a clean room after chemical etching of the native ones.

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Section: Resultsmentioning

confidence: 60%

Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Section: Experimental and Methodsmentioning

confidence: 99%

See 2 more Smart Citations

Native Silicon Oxide Properties Determined by Doping

Della Ciana,

Kovtun,

Summonte

et al. 2023

Langmuir

Self Cite

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“…A quasi symmetric Gaussian height distribution is obtained especially for St‐1, where the related kurtosis (R Ku : characterizing the sharpness of the distribution peak) and skewness (R Sk : revealing the asymmetry of the distribution function) were found to have values close to 3 and 0, respectively, whereas for the sample St‐5, R Ku ~2.6 and R Sk ~0.3. It is well known that when the height distribution is Gaussian, R Ku =3, and when it is symmetrical, R Sk =0 40,41 …”

Section: Resultsmentioning

confidence: 99%

Study of silicon surface micro‐roughness generated by SF₆ remote plasma etching

Saloum

Zrir

Alkhaled

et al. 2023

Surface & Interface Analysis

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We investigate micro-roughness of silicon surface in remote radiofrequency (RF) SF 6 plasma, for different etching durations. A linear behavior of etching rate is observed as a function of etching time. PL measurements at different temperatures indicate a visible (green and violet) and ultraviolet (UV) emissions. The evolution of surface roughness of Si substrates can be controlled depending on the etching duration.In response to the increase of the etching duration, the surface undergoes nanoscale roughening, ripple formation, and finally microscale roughening. Atomic force microscopy analysis was carried out to surface morphology.

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Topographical and morphological changes of the single‐crystal (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ (001) surface treated with high‐purity deionized water

Tokuda,

Nishikawa,

Irimoto

et al. 2024

Surface & Interface Analysis

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The topological and morphological changes of the (001) surface of single‐crystal (La0.3Sr0.7)(Al0.65Ta0.35)O3 during treatment with high‐purity deionized water (DI) have been investigated by atomic force microscopy and scanning transmission electron microscopy (STEM). Etching by DI treatment at room temperature proceeded mainly in anisotropic etching mode, resulting in rectangular etch pits with {001} inner surfaces forming in the surface. The dominant etching mode changed from anisotropic to isotropic with increasing DI‐treatment temperature, and the lowest surface roughness occurred for DI treatment at 50°C for 60 min. Direct observation of the atomic structure of the surface by STEM showed that the etched surface was the B‐site‐terminated (001) surface after anisotropic etching at 50°C for 60 min, in which the B‐site‐terminated atomic layer was found to maintain the B‐site ordered structure existing in the crystal. This is because DI treatment, which does not require high‐temperature heat treatment of the substrate, suppresses element diffusion, sublimation, and formation of point defects on and in the vicinity of the surface.

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Identification of ultra-thin molecular layers atop monolayer terraces in sub-monolayer organic films with scanning probe microscopy

Cited by 5 publications

References 115 publications

Native Silicon Oxide Properties Determined by Doping

Native Silicon Oxide Properties Determined by Doping

Study of silicon surface micro‐roughness generated by SF₆ remote plasma etching

Topographical and morphological changes of the single‐crystal (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ (001) surface treated with high‐purity deionized water

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Identification of ultra-thin molecular layers atop monolayer terraces in sub-monolayer organic films with scanning probe microscopy

Cited by 5 publications

References 115 publications

Native Silicon Oxide Properties Determined by Doping

Native Silicon Oxide Properties Determined by Doping

Study of silicon surface micro‐roughness generated by SF6 remote plasma etching

Topographical and morphological changes of the single‐crystal (La0.3Sr0.7)(Al0.65Ta0.35)O3 (001) surface treated with high‐purity deionized water

Contact Info

Product

Resources

About

Study of silicon surface micro‐roughness generated by SF₆ remote plasma etching

Topographical and morphological changes of the single‐crystal (La_0.3Sr_0.7)(Al_0.65Ta_0.35)O₃ (001) surface treated with high‐purity deionized water