Identification of the temporal source of frequency domain characteristics of SiC MOSFET based power converter waveforms

Walder, Sam; Yuan, Xibo; Laird, Ian; Dalton, Jeremy

doi:10.1109/ecce.2016.7855180

Cited by 21 publications

(8 citation statements)

References 11 publications

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“…As a result, it can be concluded that the MP-DOW of the current EMI source can more accurately express the amplitude frequency characteristics of the EMI generated during the switching process. Moreover, it can be seen that there is an error between the spectrum envelope and FT analysis results in the low-frequency band (100 kHz-2 MHz), which is caused by the scaling of Equations ( 17) and (18). For the voltage EMI source, the verification of the MP-DOW is shown in Figure 8.…”

Section: Verification Of Emi Sourcementioning

confidence: 99%

“…For MP waveforms in the MP-DOW, each polyline corresponds to an envelope in the frequency domain. However, considering that Equation ( 14) is too complicated, it is difficult to calculate the characteristic parameters of each envelope by a mathematical method like [18][19][20]. Therefore, the graphical method is introduced to approximate the spectrum envelope characteristic parameters of the multi-polyline waveforms.…”

Section: Spectrum Envelop Of Emi Sourcesmentioning

confidence: 99%

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Analysis of time‐frequency characteristic parameters of electromagnetic interference sources in the basic commutation unit

Zhao

Cheng

Tang

et al. 2022

IET Power Electronics

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Establishing accurate electromagnetic interference (EMI) sources of the basic commutation unit is the key to accurately predicting the EMI of the converter equipment. To compensate for the insufficiency of the reported works, that is to use asymmetric trapezoidal waveforms (ATW) as common mode (CM) and differential mode (DM) EMI sources, this paper analyzed the switching transient process of insulated gate bipolar transistor (IGBT) device in the basic commutation unit, and then proposed the equivalent waveform of EMI sources with multi‐polylines‐damped oscillation waveform (MP‐DOW). The spectrum envelop characteristic parameters of MP‐DOW were obtained by the frequency domain analysis method, and its correctness was experimentally verified. Comparison with the reported works shows that the proposed spectrum envelope of MP‐DOW can take into account the voltage and current overshoot during the switching transients of IGBT devices, and the spectrum characteristic parameters are more accurate. This paper is beneficial to the prediction of EMI for the converter already in operation, and can also provide theoretical guidance for the converter to be designed in conjunction with the analytical formula of the EMI source.

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Section: Verification Of Emi Sourcementioning

confidence: 99%

Section: Spectrum Envelop Of Emi Sourcesmentioning

confidence: 99%

Analysis of time‐frequency characteristic parameters of electromagnetic interference sources in the basic commutation unit

Zhao

Cheng

Tang

et al. 2022

IET Power Electronics

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“…As the switching speed increases, the switching loss reduces but the EMI level increases. The EMI metric used here was defined in [48]. Note that, the turn-off waveforms (not shown here) are much 'cleaner' than the turn-on waveforms in Fig.16 with less voltage and current overshoot and ringing.…”

Section: A Current Overshoot Ringing Emi and Switching Lossmentioning

confidence: 99%

“…However, it may be possible to shape the switching waveforms to attenuate the high-frequency components without increasing the switching loss. Fig.37(a) shows four waveforms (square, trapezoidal, 'S' shaped and a more smoothed one with 4 th derivative control) [48]. The 'trapezoidal' waveform is a common switching waveform with sharp corners and linear edges.…”

Section: Waveform Shaping Through Gate Controlmentioning

confidence: 99%

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Yuan

Laird

Walder

2021

IEEE Trans. Power Electron.

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101

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Power devices based on wide-bandgap (WBG) material such as silicon-carbide (SiC) can operate at higher switching speeds, higher voltages and higher temperatures compared to those based on silicon (Si) material. This paper highlights some opportunities brought by SiC devices in existing and emerging applications in terms of efficiency and power density improvement. While the opportunities are clear, there are also design challenges that must be met in order to realize their full potential. For example, the fast switching speeds and high dv/dt of SiC devices can cause increased electromagnetic interference (EMI), current overshoot, cross-talk effect and have a negative impact on loads such as motors. This paper presents several potential solutions to tackle the application challenges and to fully exploit the superior characteristics of SiC devices and converters while attenuating their negative side-effects. This paper provides an overview of recent SiC device research and development activities based on academic literature, work carried out by the authors and collaborators as well as input from industry. It aims to provide benchmark results and a timely and useful reference to accelerate the adoption and deployment of SiC devices and converters.

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“…Several possible solutions such as adding an output inductor [18], alternative topologies [9] or waveform shaping through gate control [19], multilevel [20] and soft-switching techniques [21] can be adopted to mitigate the side-effects caused by the ultra-high switching speed of SiC MOSFETs. Among these methods, soft-switching can mitigate the current/voltage overshoots, cross-talk, EMI as well as converter-load interference while maintaining high efficiency because the output waveforms are smoothed due to resonant operation and the voltage and current of switching devices are decoupled [22].…”

Section: Introductionmentioning

confidence: 99%

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

Zhou

Yuan

2020

IEEE Trans. on Ind. Applicat.

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SiC MOSFETs have shown superior characteristics to Si IGBTs, bringing in significant performance improvement such as enabling more compact, higher efficiency converters that are not feasible with conventional Si IGBTs. Currently, there is a lack of systematic and conclusive investigation into soft-switching inverters using SiC MOSFETs in comparison to Si IGBTs. This paper, therefore, presents a comparative evaluation of a softswitching inverter, i.e. the auxiliary resonant commutated pole inverter (ARCPI) using SiC MOSFETs or Si IGBTs. The switching transition, switching device current stress, neutral point ripple current, electromagnetic interference (EMI), efficiency and cost are compared on identical ARCPI setups, i.e. with the same PCBs and under identical driving conditions (gate drivers). Experimental results show that the ARCPI using SiC MOSFETs has better performance than that using Si IGBTs due to its faster switching speed. Firstly, the ARCPI using SiC MOSFETs performs full zero-voltage switching and the switching transition behaviour is more predictable. Unlike Si IGBTs, SiC MOSFETs have no turn-off tail current and forward voltage drop during switching transitions. Secondly, the ARCPI using SiC MOSFETs endures less current stress and smaller ripple current in dc-link capacitors. Thirdly, the ARCPI using SiC MOSFETs exhibits better EMI performance and higher efficiency. Specifically, a maximum 20 dBμV harmonic reduction can be achieved around 800 kHz and a 3.1% improvement in efficiency can be achieved at 6 kW.

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Identification of the temporal source of frequency domain characteristics of SiC MOSFET based power converter waveforms

Cited by 21 publications

References 11 publications

Analysis of time‐frequency characteristic parameters of electromagnetic interference sources in the basic commutation unit

Analysis of time‐frequency characteristic parameters of electromagnetic interference sources in the basic commutation unit

Opportunities, Challenges, and Potential Solutions in the Application of Fast-Switching SiC Power Devices and Converters

Experimental Evaluation of SiC Mosfets in Comparison to Si IGBTs in a Soft-Switching Converter

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