Identification of the Si2pSurface Core Level Shifts on theSb/Si(001)−(2×1)Interfac

Abstract

We investigated the effect of Sb-dimer-induced Si(001) relaxation on the Si 2p core level by highresolution photoemission spectroscopy. Two surface components, S ‫ء‬ and C ‫ء‬ , were identified in the Si 2p core level measured on the Sb͞Si͑001͒-͑2 3 1͒ surface at 1 monolayer Sb coverage. By using the Sb-Ge site exchange process, a Ge layer was inserted between the Sb dimers and the Si substrate to separate the Si 2p contribution arising from different atomic layers. We demonstrated that S ‫ء‬ includes the contribution of the first, second, and third layers, whereas only the third layer contributes to C ‫ء‬ .[S0031-9007(98)

Electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2determined by polarized x-ray spectroscopy and Seebeck measurements

“…As the z component of the Si phonon frequency also has 3-4 times higher frequency than the in-plane frequency, it implies that the electron-phonon coupling will mostly affect the top part of the valence band. The Si 2p core-hole decay in the SXE process has a lifetime of about 30 fs (20 meV) 39 that is on a faster time scale compared to the phonon vibrations, i.e., about 80 fs out-of-plane and 300 fs along the basal plane. Our atomic displacement calculations of Si atoms rattling with high frequency along the c axis result in an enhancement of the Si 3d SXE intensity within 0-5 eV as observed in the experiment.…”

Surface core-level shifts on clean Si(001) and Ge(001) studied with photoelectron spectroscopy and density functional theory calculations

“…Even though the atomic origins are being debated, there is an overall agreement regarding the energy position of the major components in the Si 2p spectra. [6][7][8][9][10] The components of the Ge 3d spectrum from Ge͑001͒ are less well established [11][12][13][14][15] due to the lack of pronounced features in the spectra.…”

Operational principles of electrochemical nanoemitter solar cells for photovoltaic and photoelectrocatalytic applications

“…Such a situation would exist if the first oxide layer would be crystalline, which has been postulated earlier [52]. The energetic shift, caused by such a dipole layer, is for simplicity be expressed using the microcapacitor model [53] that has been applied to explain surface core level shifts in synchrotron radiation photoelectron spectroscopy (SRPES). The energy shift is calculated using the capacitor equation…”

“…The interfacial region is usually characterized by a comparable small dielectric constant. For the H-terminated Si surface, De Padova et al [53] took the value of hydrogenated amorphous silicon, e.g. e = 6 in their approximation which is small enough to induce energetic changes in the range of 1 eV.…”