Identification of Star Defects in Gallium Nitride with HREBSD and ECCI

Ruggles, Timothy; Deitz, Julia I.; Allerman, Andrew A.; Carter, C. Barry; Michael, Joseph R.

doi:10.1017/s143192762100009x

Cited by 11 publications

(4 citation statements)

References 39 publications

(48 reference statements)

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“…Use of GaN substrates manufactured with halide-vapor phase epitaxy (HVPE) reduces these defects but can introduce different defects. This study investigates one such defect, the star defect, recently reported in the literature [1]. These defects are hundreds of microns in size and may be related to defects reported in GaN substrates [2].…”

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confidence: 94%

Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates

et al. 2021

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Defect analysis of star defects in GaN thin films grown on HVPE GaN substrates

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“…36 The technique has previously been successfully used to investigate the defect structure in solar cells, metals, and (0001) (c-plane) GaN. 34,[37][38][39][40] The first research on semi-polar GaN, investigating the widely used (11 22) orientation, was published by Naresh-Kumar et al 41 They demonstrated the ability of ECCI on semi-polar samples to locate threading dislocation clustering as well as identify the presence of BSFs.…”

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confidence: 99%

Defect characterization of {101¯3} GaN by electron microscopy

Kusch

Frentrup

et al. 2022

Journal of Applied Physics

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Advances in obtaining untwinned (10[Formula: see text]3)-oriented semi-polar GaN enable a new crystal orientation for the growth of green and red LED structures. We present a scanning electron microscopy study that combines the structural characterization of electron channeling contrast imaging with the optical characterization of cathodoluminescence hyperspectral imaging on a [Formula: see text] GaN layer. An extensive defect analysis revealed that the dominant defects consist of basal plane stacking faults (BSFs), prismatic stacking faults, partial dislocations, and threading dislocations. With a defect density of about an order of magnitude lower than in comparable. The optical properties of the defects have been characterized from 10 to 320 K, showing BSF luminescence at room temperature indicating a reduced density of non-radiative recombination centers in the as-grown samples compared to established semi- and non-polar orientations. Our findings suggest that growth along (10[Formula: see text]3) has the potential for higher radiative efficiency than established semi-polar orientations.

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“…EBSD patterns were obtained using an EDAX Clarity TM direct electron detector at 512 x 512 pixel resolution. HR-EBSD calculations were performed using OpenXY [5]. Figure 1 shows one of the shear components of the elastic strain gradient tensor for the sample investigated.…”

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confidence: 99%

“…Such an analysis has been applied to the AM stainless steel sample as shown in Figure 2 where the color at each point correspond to the polar coordinates of Burgers and line vectors. From these measurements, the Burgers vector for the each of three notable structures was found to vary from [110] at the left, [1][2][3][4][5][6][7][8][9][10] for the center and a mixed at right. These results demonstrate the ability to rapidly characterize dislocation structures in terms of defect character, distribution, and associated strain fields, opening up the possibility of high throughput defect structure characterization in AM parts.…”

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confidence: 99%