Identification of intermediate linear structure formed during Bi/Si(001) surface anneal

Owen, James H. G.; Bowler, David R.; Miki, Kazushi

doi:10.1016/j.susc.2005.09.012

Cited by 11 publications

(7 citation statements)

References 32 publications

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“…Passivation was achieved using atomic hydrogen generated from a W filament heated to 1350 °C at a distance of 6 cm from the sample, whose temperature was held at 350 °C. While previous reports have suggested that the Bi nanowires are completely resistant to atomic H, , we found that at high doses of H the Bi nanowires begin to show increasing numbers of missing atom and missing dimer defects, and eventually most of the Bi atoms from the nanowires dewet and form small islands or clusters (see Supporting Information). Therefore, care was taken to control the atomic H dose such that the Bi nanowires remained largely intact, while sufficiently passivating the Si surface with a suitable concentration of dangling bond sites at which styrene chain growth can be initiated.…”

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confidence: 60%

Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface

Wang

Hersam

2008

J. Am. Chem. Soc.

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Orthogonal, interconnected inorganic and organic one-dimensional nanostructures have been fabricated by parallel self-assembly on the Si(100) surface and investigated using room temperature ultrahigh vacuum scanning tunneling microscopy. In particular, bismuth nanowires were self-assembled on the clean Si(100)-2 x 1 surface perpendicular to the Si dimer rows, followed by hydrogen passivation of the surrounding Si surface. Styrene molecular chains were then self-assembled on the H-passivated Si(100)-2 x 1 surface to intersect perpendicularly with the Bi nanowires. This general approach can likely be applied to the wide range of inorganic and organic species that spontaneously form one-dimensional nanostructures on the Si(100) surface.

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confidence: 60%

Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface

Wang

Hersam

2008

J. Am. Chem. Soc.

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“…Recently, there have been hot STM studies of GdSi 2 nanowire reactions on Si(100) which have helped to define the structure of a new type of nanowire [8]. Hot STM imaging has also been used to identify an intermediate, Bi-related, linear structure formed during Bi/Si(001) surface annealing [9]. STM of SrTiO 3 (001) has been carried out at temperatures of just under 800 • C and has been used to study the motion of step edges of the (2 × 2) surface reconstruction [10].…”

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confidence: 99%

Hot STM of nanostructure dynamics on SrTiO₃(001)

et al. 2006

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The dynamics of nanostructured surface phases on SrTiO 3 (001) have been analysed using in situ scanning tunnelling microscopy (STM) above 800 • C. During high-temperature annealing, the formation, growth and ordering of the nanostructures has been observed. Dilines, with a width of ∼1 nm, are formed from a TiO 2 -rich intermediary at 800 • C. STM during annealing at 825 • C has enabled us to follow both the growth and dissolution of dilines. Following extended annealing, trilines with a width of ∼2 nm and ordered two-dimensional (2D) nano-arrays form from the diline domains. Our observations of diline dissolution implies random nucleation and growth, followed by rearrangement at elevated temperature to form domains. M This article features online multimedia enhancements

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“…We note that there have been recent suggestions that the Bi nanolines have the structure known as the 'Miki' model (where the Bi dimers are in line with the underlying Si substrate dimers, and are separated by a missing surface dimer) [22]. As shown in recent papers [23,24], we believe that this assignment is contradicted by virtually all the evidence available; nevertheless, small islands of 'Miki' structure can remain in the substrate after preparation of a nanoline template [23], so we have modelled the effects of adding In to this structure. We find that it is at least 0.1 eV per pair of In atoms less stable than adding In to the Haiku structure.…”

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1D semiconducting atomic chain of In and Bi on Si(001)

Bowler

Bird

Owen

2006

J. Phys.: Condens. Matter

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Deposition of In onto a Bi nanoline template on the Si(001) surface at a very low flux produces long, flat islands with a zigzag appearance. We show that these islands result from the intermixing of the In and the Bi dimer atoms in the nanoline, and comprise an In–Bi atomic chain structure along each half of the nanoline in which the In and Bi atoms can take up favoured hybridizations—sp2 (with empty p orbital) and p3 (with filled s orbital) respectively. There are six different possible isomers of the double-zigzag structure, resulting from different arrangements of the chains on the two sides of the nanolines. Tight-binding and density functional theory (DFT) simulations of the different candidates find that three of these structures have a higher energy than the other three as a result of a repulsive Bi–Bi Coulomb interaction. The two lowest-energy isomers will both match the appearance of the double zigzag in filled-state STM images.

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Identification of intermediate linear structure formed during Bi/Si(001) surface anneal

Cited by 11 publications

References 32 publications

Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface

Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface

Hot STM of nanostructure dynamics on SrTiO₃(001)

1D semiconducting atomic chain of In and Bi on Si(001)

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Identification of intermediate linear structure formed during Bi/Si(001) surface anneal

Cited by 11 publications

References 32 publications

Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface

Orthogonal Self-Assembly of Interconnected One-Dimensional Inorganic and Organic Nanostructures on the Si(100) Surface

Hot STM of nanostructure dynamics on SrTiO3(001)

1D semiconducting atomic chain of In and Bi on Si(001)

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Hot STM of nanostructure dynamics on SrTiO₃(001)