Identification and control of SiC polytypes in PVT method

Lin, Shenghuang; Chen, Zhiming; Liu, Bo; Li, Lianbi; Feng, Xianfeng

doi:10.1007/s10854-009-9914-3

Cited by 16 publications

(16 citation statements)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The p-Si/n-Si interface is abrupt in structure, and the p-Si layers exhibit brighter contrast. The SAED patterns of the p/n-Si DSL corresponding to the Si[011] zone axes confirm the epitaxial growth of the Si films with [ 1 , 2 , 3 , 4 , 5 , 6 , 7 , 8 , 9 , 10 , 11 ] preferred orientation, as shown in Figure 4 b. Figure 4 c shows a high-resolution TEM image of the p-Si/n-Si interface.…”

Section: Resultssupporting

confidence: 53%

“…SiC is a desirable material for power devices due to its superior physical properties such as a wide bandgap, high thermal conductivity, and high critical electric field, etc. [ 1 , 2 , 3 , 4 , 5 , 6 , 7 ]. In order to realize the visible light operation of SiC photoelectric devices applied in high temperature and high power regions, Si films were grown on SiC for visible light absorption [ 8 , 9 ].…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

Yuan

et al. 2017

Materials

Self Cite

View full text Add to dashboard Cite

The energy-band structure and visible photoelectric properties of a p/n-Si doping superlattice structure (DSL) on 6H-SiC were simulated by Silvaco-TCAD. The,n the Si-DSL structures with 40 nm-p-Si/50 nm-n-Si multilayers were successfully prepared on 6H-SiC(0001) Si-face by chemical vapor deposition. TEM characterizations of the p/n-Si DSL confirmed the epitaxial growth of the Si films with preferred orientation and the misfit dislocations with a Burgers vector of 1/3 <21-1> at the p-Si/n-Si interface. The device had an obvious rectifying behavior, and the turn-on voltage was about 1.2 V. Under the visible illumination of 0.6 W/cm2, the device demonstrated a significant photoelectric response with a photocurrent density of 2.1 mA/cm2. Visible light operation of the Si-DSL/6H-SiC heterostructure was realized for the first time.

show abstract

Section: Resultssupporting

confidence: 53%

Section: Introductionmentioning

confidence: 99%

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

Yuan

et al. 2017

Materials

Self Cite

View full text Add to dashboard Cite

show abstract

“…SiC single crystals were grown in a conventional physical vapor transport (PVT) setup 2 . Nitrogen (N) doping was performed by mixing nitrogen gas to the argon growth atmosphere.…”

Section: Methodsmentioning

confidence: 99%

“…Silicon carbide (SiC), one of the oldest known semiconductor materials, has received special attention in recent years because of its suitability for electronic and optoelectronic devices operating under high temperature, high power, high frequency, and/or strong radiation conditions [1][2][3][4][5] . As a perfect wide band gap semiconductor, SiC is an insulator whose intrinsic resistivity can be up to ~3.75 × 10 21 Ω·cm.…”

Section: Introductionmentioning

confidence: 99%

Effect of impurities on the Raman scattering of 6H-SiC crystals

Lin

Chen

et al. 2012

Mat. Res.

Self Cite

View full text Add to dashboard Cite

Raman spectroscopy was applied to different-impurities-doped 6H-SiC crystals. It had been found that the first-order Raman spectra of N-, Al-and B-doped 6H-SiC were shifted to higher frequency when comparing with undoped samples. However, the first-order Raman spectra of V-doped sample was shifted to lower frequency, revealing that there existed low free carrier concentration, which might be induced by the deep energy level effect of V impurity. Meanwhile, the second-order Raman spectra are independent of polytype and impurity type.

show abstract

“…MS has been used in the synthesis of thermoelectric materials including Bi 2 Te 3 , 8,9 FeSi, 10 Yb x Co 4 Sb 12 , 11 and filled Skutterudite compounds. 12 When it comes to Si-Ge thermoelectric alloys, Hideaki Nagai et al 13 applied splat cooling, also a RS method, to prepare Si-Ge alloys with the microstructure of fine crystal grains and good homogeneity, resulting in a decrease of thermal conductivity compared with the slow solidification method.…”

Section: Introductionmentioning

confidence: 99%

Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning

Zhang

Zhong

Chen

et al. 2010

Journal of Elec Materi

View full text Add to dashboard Cite

n-Type Si-Ge thermoelectric alloys were prepared using a melt spinning (MS) process, and then the microstructures of the samples were investigated. The alloys studied were ribbon shaped with a thickness of about 30 lm. Scanning electron microscopy (SEM) along with energy-dispersive spectrometry (EDS) and x-ray diffraction (XRD) showed a predictable, homogeneous, fine-grained microstructure at the high cooling rate, different from those of samples created by slow solidification (SS).

show abstract

Identification and control of SiC polytypes in PVT method

Cited by 16 publications

References 6 publications

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

Photoelectric Properties of Si Doping Superlattice Structure on 6H-SiC(0001)

Effect of impurities on the Raman scattering of 6H-SiC crystals

Effect of Cooling Rate on Microstructural Homogeneity and Grain Size of n-Type Si-Ge Thermoelectric Alloy by Melt Spinning

Contact Info

Product

Resources

About