Idealised operation of zero-voltage-switching series-L/parallel-tuned Class-E power amplifier

Thian, Mury; Fusco, Vincent

doi:10.1049/iet-cds:20070153

Cited by 18 publications

(18 citation statements)

References 8 publications

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“…But this translates into higher component count. To improve the 2 nd harmonic attenuation while keeping the component count to a minimum, the shunt capacitance CX in the matching network was replaced with a series L5-C3 resonator tuned at 2f0 in order to provide a short-circuit to ground for the second harmonic signal, (1). The resonator needs to be sized in such a way that it presents the original value of CX at f0, (2).…”

Section: Amplifier Design Methodologymentioning

confidence: 99%

“…The switched-mode Class-E amplifier described in [1]- [3] offers a maximum DC-to-RF efficiency of 100% without the need for complex load networks seen in Class-F amplifiers. It integrates a shunt capacitor into its load network in order to increase the efficiency by reducing switching losses when the transistor is off by providing a path for the current.…”

Section: Introductionmentioning

confidence: 99%

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A 5-GHz Class-E power amplifier with an Inverse Class-B driver on 65nm CMOS

Love

Colin

Thian

2017

2017 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop (INMMiC)

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Abstract-The design and simulation of a Class-E power amplifier with an Inverse Class-B driver are presented. The Inverse Class-B amplifier generates a train of half sinusoids which provides a compromise between using a sine wave and a square wave as the input waveform. The design methodology proposed includes the use of load-pull technique to determine the optimum fundamental-frequency load-impedance of the amplifiers, and a series LC resonator to improve the second-harmonic suppression level. The PA exhibited 26.3 dB gain and 57% PAE at an output power of 21.3 dBm with the second and third harmonics attenuated to 38 and 37.3 dBc respectively.

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Section: Amplifier Design Methodologymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A 5-GHz Class-E power amplifier with an Inverse Class-B driver on 65nm CMOS

Love

Colin

Thian

2017

2017 Integrated Nonlinear Microwave and Millimetre-Wave Circuits Workshop (INMMiC)

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“…than that required in class-E topology, which is beneficial to the design of monolithic microwave integrated circuit (MMIC) [12]. For PAs design, most of the literatures in this area study the characteristics of inverse class-E operation only with 50 % nominal switch duty ratio.…”

Section: Introductionmentioning

confidence: 99%

Derivation of Closed-Form Design Equations for Idealized Operation of Inverse Class-E Power Amplifiers at Any Duty Ratio

Wang¹,

Foo²,

He³

2015

International Journal of Electronics and Telecommunications

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Abstract-Complementary to the conventional class-E topology, inverse class-E operation has several advantages over the class-E counterpart, such as lower peak switch voltage and smaller circuit inductance, which are attractive to high power RF design and MMIC implementation. This paper derives the closed-form design equations that can be used to synthesize the idealized operation of inverse class-E power amplifiers at any switch duty ratio. Calculation of the key design parameters, such as the maximum switch voltage and circuit components values, is elaborated and compared with the case of conventional class-E operation. Further, the theoretical analysis is confirmed and verified by numerical simulations performed on a 500 mW, 2.4 GHz idealized inverse class-E power amplifier.

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“…Another high-efficiency PA topology, i.e., the Class-E PA with shunt capacitance and shunt filter depicted in Fig. 1(a) is introduced in [11]. A similar variant shown in Fig.…”

mentioning

confidence: 99%

“…For more information, see http://creativecommons.org/licenses/by/4.0/ Class-E PA with shunt capacitance and shunt filter. (a) Circuit topology in [11]. (b) Circuit topology in [12].…”

mentioning

confidence: 99%

Generalized Class-E Power Amplifier With Shunt Capacitance and Shunt Filter

Mugisho

Makarov

Rassokhina

et al. 2019

IEEE Trans. Microwave Theory Techn.

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This paper presents a generalized analysis of the Class-E power amplifier (PA) with a shunt capacitance and a shunt filter, leading to a revelation of a unique design flexibility that can be exploited either to extend the maximum operating frequency of the PA or to allow the use of larger active devices with higher power handling capability. The proposed PA fulfills zero voltage switching (ZVS) and zero voltage derivative switching (ZVDS) conditions, resulting in a theoretical dc-to-RF efficiency of 100%. Explicit design equations for the load-network parameters are derived, and the analytical results are confirmed by harmonic-balance simulations. Two PA prototypes were constructed with one designed at low frequency and the other at high frequency. The first PA, which employs a MOSFET and a lumped-element load-network, delivered a peak drain efficiency (DE) of 93.3% and a peak output power of 37 dBm at 1 MHz. The second PA, which employs a GaN HEMT and a transmissionline (TL) load-network to provide the drain of the transistor with the required load impedances at the fundamental frequency as well as even and odd harmonic frequencies, delivered a peak DE of 90.2% and a peak output power of 39.8 dBm at 1.37 GHz.

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Idealised operation of zero-voltage-switching series-L/parallel-tuned Class-E power amplifier

Cited by 18 publications

References 8 publications

A 5-GHz Class-E power amplifier with an Inverse Class-B driver on 65nm CMOS

A 5-GHz Class-E power amplifier with an Inverse Class-B driver on 65nm CMOS

Derivation of Closed-Form Design Equations for Idealized Operation of Inverse Class-E Power Amplifiers at Any Duty Ratio

Generalized Class-E Power Amplifier With Shunt Capacitance and Shunt Filter

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