Ideal PN photodiode using doping controlled WSe<sub>2</sub>–MoSe<sub>2</sub> lateral heterostructure

Kim, Ji Eun; Kang, Won Tae; Vu, Van Tu; Kim, Young Rae; Shin, Younghak; Lee, Ilmin; Won, Ui Yeon; Lee, Boo Heung; Kim, Kunnyun; Phan, Thanh Luan; Lee, Young Hee; Yu, Woo Jong

doi:10.1039/d0tc05625a

Cited by 17 publications

(12 citation statements)

References 40 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As clearly demonstrated, the doping process causes a significant decrease in PL intensity; the PL peak arises from radiative recombination of bright excitons at the K/-K valley. The observed reduction in PL intensity is consistent with carrier doping induced by the substitutional doping reported previously. ,− In addition to the decrease in PL intensity, PL peaks shift to the red side, which is consistent with the previous works on substitutional Nb doping; the increase in hole density and possible strain induced by Nb doping can cause the PL red shift . Corresponding Raman spectra (Figure b), where Raman peaks arising from A′ 1 and E′ at around 250 cm −1 are seen, showing intensity reduction, also compatible with earlier works. , Typical AFM image and height profiles before and after doping (Figure c) show that the thickness of the original WSe 2 does not alter after a doping process; the formation of second layers, metallic NbSe 2 , and attachment of impurities are not observed.…”

Section: Results and Discussionsupporting

confidence: 91%

“…X-ray photoelectron spectroscopy (XPS) has shown the existence of Nb atoms (Nb 3d peaks) and doping-induced red shifts in the W 4f and Se 3d peaks in the XPS spectra of Nb-doped WSe 2 , which is consistent with previous works (Figure S3). 20,28 Considering all results, including HAADF-STEM, EDX, PL, AFM, and XPS, it is reasonable to conclude that substitutional Nb doping, which leads to hole doping, is the dominant process in our postdoping method.…”

Section: Resultsmentioning

confidence: 85%

See 1 more Smart Citation

Versatile Post-Doping toward Two-Dimensional Semiconductors

et al. 2021

View full text Add to dashboard Cite

We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy dopant beams and a high-flux chalcogen beam at the same time, leading to substitutional doping with controlled dopant densities. Atomic-resolution transmission electron microscopy has revealed that dopant atoms injected toward TMDs are incorporated substitutionally into the hexagonal framework of TMDs. Electronic properties of doped TMDs (Nb-doped WSe2) have shown drastic change, p-type action with more than two orders of magnitude increase in on current. Positionselective doping has also been demonstrated by the post-doping toward TMDs with a patterned mask on the surface. The post-doping method developed in this work can be a versatile tool for 2D-based next-generation electronics in the future.

show abstract

Section: Results and Discussionsupporting

confidence: 91%

Section: Resultsmentioning

confidence: 85%

Versatile Post-Doping toward Two-Dimensional Semiconductors

et al. 2021

View full text Add to dashboard Cite

show abstract

“…Interestingly, the addition of the top Ag sphere to the geometry further redshifts the optical bandgap by 14 meV (a total of 35 meV shift from pristine WSe 2 ). This material effect of Ag sphere onto monolayer WSe 2 has not been reported before to the best of our knowledge, and previous works have always associated redshift in PL of monolayer due to various dopants with p-doping of the material [28,[38][39][40]. Raman peak shift pattern observed matches with other work indicative of possible p-type doping of WSe 2 by our device structure; however, a conclusive result would require an electrical measurement [31].…”

Section: Resultssupporting

confidence: 86%

Characterization of monolayer WSe₂ sandwiched in a hetero-plasmonic dimer

2022

View full text Add to dashboard Cite

Recent interests in layered transition-metal dichalcogenides (TMDCs), such as WSe2, MoS2, etc., arise due to their attractive electrical, optical, and mechanical properties with potential applications in energy storage, generation, and many more. Embedding these 2D materials in plasmonic cavities can further enhance light-matter interactions and alter their properties, resulting in diverse and efficient optoelectronic applications. The strain due to the geometry and charge transfer due to the plasmonic materials can further modify the TMDCs’ optical response for sensing applications and as single photon emitters in on-chip optoelectronic applications. This work discusses one such 2D-plasmonic hybrid configuration of a silver sphere on a gold disc with WSe2 sandwiched in between. We perform non-invasive Raman and PL studies of this system to estimate the field enhancement and discuss strain and doping induced in the TMDC.

show abstract

“…[ 29–33 ] The proficiency of these photodetectors can be improvised by employing the heterostructure architecture. [ 28,34–36 ] Furthermore, the combination of photoactive MoSe 2 and bulk semiconductor such as silicon (Si), germanium (Ge), Gallium nitride (GaN), or other compound semiconductors can provide high‐performance broadband photodetectors by exploiting the advantageous properties of both the materials. Few research groups have demonstrated the MoSe 2 /Si [ 28,37,38 ] and MoSe 2 /Ge [ 36 ] heterojunction devices that showed responsivity ranging from 270 mA W −1 at 650 nm to 35 A W −1 at 1550 nm and modest detectivity in their operational range.…”

Section: Introductionmentioning

confidence: 99%

MoSe₂/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

Sandhu

Jelonnek

Jakhar

et al. 2022

Adv Materials Inter

View full text Add to dashboard Cite

of TMDs alter with the layer thickness, ranging from single to few monolayers to bulk. The individual layers in the crystalline structure of atomically thin TMD (consisting of single or few layers) are held together by weak van der Waals force of attraction. [11,12] The absence of dangling bonds allows the fabrication of LMCs on various substrates or materials with different dimensionalities due to relaxation in strain related issues which arise due to lattice mismatch and thermal mismatch between the epitaxial layer and the substrate. [13] This opens the perspectives for the development of high-quality heterojunction devices based on LMCs and 3-dimensional semiconductors as the performance of such devices depend primarily on interfacial properties. Broadband photodetection can be achieved by integrating LMCs and other bulk semiconductors to cover the wide spectrum range.Various TMDs based on metals like Molybdenum (Mo), Tungsten (W), and Tin (Sn), such as MoS 2 , MoSe 2 , WS 2 , WSe 2 , SnS 2 , etc. have emerged as promising candidates for futuristic applications. [14][15][16][17][18][19][20][21] Among them, MoS 2 has been extensively studied in the past few years for TMD-based photodetectors due to its high sensitivity, light absorption, electron mobility, and lower dimensionality. [22][23][24] On a par with MoS 2 , MoSe 2 is another TMD that possesses great potential. MoSe 2 has a variable bandgap according to its number of layers, ranging from a direct bandgap of 1.6-1.9 eV for monolayer to an indirect bandgap of 1.1 eV for bulk. [25][26][27] It shows n-type conducting channel behavior with average mobility of 50 cm 2 V -1 s -1 for its monolayer-based field-effect transistors (FETs) whereas charge mobility of 100 cm 2 V -1 s -1 has been reported for bulk MoSe 2 . [28] More notably, its absorption spectrum spans the visible to nearinfrared (NIR) wavelength spectrum. However, the performance of MoSe 2 -based photodetectors is still circumscribed in terms of responsivity, detectivity and time response. [29][30][31][32][33] The proficiency of these photodetectors can be improvised by employing the heterostructure architecture. [28,[34][35][36] Furthermore, the combination of photoactive MoSe 2 and bulk semiconductor such as silicon (Si), germanium (Ge), Gallium nitride (GaN), or other compound semiconductors can provide high-performance broadband photodetectors by exploiting the advantageous properties of both the materials. Few research groups have demonstrated the MoSe 2 /Si [28,37,38] and MoSe 2 /Ge [36] heterojunction devices that showed responsivity ranging from 270 mA W −1 Heterojunction photodiodes comprising of layered metal chalcogenides and wide-bandgap semiconductors are a promising candidate for broadband photodetection. In this work, nanolayered Molybdenum diselenide (MoSe 2 )/Gallium Nitride (GaN) based photodetector has been demonstrated from ultraviolet to near-infrared range (300-1000 nm). The performance is investigated by conducting Kelvin probe force microscopy to measure the conduction band o...

show abstract

Ideal PN photodiode using doping controlled WSe₂–MoSe₂ lateral heterostructure

Abstract: As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

Cited by 17 publications

References 40 publications

Versatile Post-Doping toward Two-Dimensional Semiconductors

Versatile Post-Doping toward Two-Dimensional Semiconductors

Characterization of monolayer WSe₂ sandwiched in a hetero-plasmonic dimer

MoSe₂/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

Contact Info

Product

Resources

About

Ideal PN photodiode using doping controlled WSe2–MoSe2 lateral heterostructure

Abstract: As the tight contact interface of the lateral PN junction enables high responsivity, specific detectivity, and fast response speed, atomic-scale two-dimensional (2D) lateral PN heterostructures are emerging as viable alternatives to silicon-based photodiodes.

Cited by 17 publications

References 40 publications

Versatile Post-Doping toward Two-Dimensional Semiconductors

Versatile Post-Doping toward Two-Dimensional Semiconductors

Characterization of monolayer WSe2 sandwiched in a hetero-plasmonic dimer

MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

Contact Info

Product

Resources

About

Ideal PN photodiode using doping controlled WSe₂–MoSe₂ lateral heterostructure

Characterization of monolayer WSe₂ sandwiched in a hetero-plasmonic dimer

MoSe₂/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths