2009
DOI: 10.1016/j.orgel.2008.11.012
|View full text |Cite
|
Sign up to set email alerts
|

Ideal host and guest system in phosphorescent OLEDs

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1
1

Citation Types

1
138
0
1

Year Published

2011
2011
2018
2018

Publication Types

Select...
6
2
1

Relationship

1
8

Authors

Journals

citations
Cited by 191 publications
(140 citation statements)
references
References 24 publications
1
138
0
1
Order By: Relevance
“…Unfortunately, both host-guest LEC and OLED devices show weak current eciency less than 0.2 cd A −1 . This can be explained by the unsuitable energy level of UM01 and host material [18]. Recently, the eciency of the LECs devices can be improved by the addition of ionic liquid (IL) [1921].…”
Section: Resultsmentioning
confidence: 99%
“…Unfortunately, both host-guest LEC and OLED devices show weak current eciency less than 0.2 cd A −1 . This can be explained by the unsuitable energy level of UM01 and host material [18]. Recently, the eciency of the LECs devices can be improved by the addition of ionic liquid (IL) [1921].…”
Section: Resultsmentioning
confidence: 99%
“…[4a, 27] In Figure 7 c, we find that the features in the EL spectra of devices resulted only from the red emission of [OsA C H T U N G T R E N N U N G (bpftz) 2 A C H T U N G T R E N N U N G (PPhMe 2 ) 2 ], thus indicating that TCTA and TPBI functioned as effective blockers to confine carriers and excitons within the EML. Figure 8 displays the behavior of the corresponding OS2-based devices.…”
Section: Abstract In Chinesementioning
confidence: 99%
“…Since Bebq 2 and beryllium complexes have very good electron transporting characteristics with high electron mobility of ~10 -4 cm 2 /Vs (Y. Liu et al, 2001;Vanslyke et al, 1991;J.-H. Lee et al, 2005) and narrow band gap, Bebq 2 can make a suitable candidate for the host of red emitting PHOLEDs (Jeon et al, 2008a(Jeon et al, , 2008bJeon et al, 2009;Pode et al, 2009 Table 5. HOMO, LUMO and triplet energy levels of some fluorescent host materials for PHOLEDs…”
Section: Discussionmentioning
confidence: 99%
“…Consequently, the selection of suitable host candidates is a critical issue in fabricating high efficiency PHOLEDs. More recently in order to address device performance and manufacturing constraints, an ideal host-guest system to produce a high efficiency phosphorescent device using a narrow band gap fluorescent host to prevent the hole/or electron trapping has been presented (Jeon et al, 2008a(Jeon et al, , 2008bJeon et al, 2009;Pode et al, 2009 3. Multiple quantum well structure 3.1 Introduction Organic light emitting diodes (OLEDs) have attracted considerable attention because of their potential applicability to flat-panel displays (FPDs) (Sheats et al, 1996;Shen et al, 1997;Friend et al, 1999), backlighting, and candidates for the next generation lighting (Destruel et al, 1999;, owing to wide viewing angle, low driving voltage, thin, light-weight, and possibly also flexible displays.…”
Section: Phosphorescent Oled Devicesmentioning
confidence: 99%