IDE embedded tungsten trioxide gas sensor for sensitive NO2 detection

Kamble, Chetan; Panse, M. S.

doi:10.1016/j.matchemphys.2018.12.015

Cited by 22 publications

(3 citation statements)

References 40 publications

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“…[1][2][3][4] In addition, they significantly affect human health via pulmonary edema, asthma, and lung irritation. [5,6] Furthermore, breathing NO x gas increases the cause of mortality for COVID-19 patients. [7][8][9] According to the World Health Organization, breathing 25 ppm of NO 2 and 3 ppm of NO for more than 8 h is toxic and may cause various health problems.…”

Section: Introductionmentioning

confidence: 99%

Interface Oxygen Vacancy‐Enhanced Co₃O₄/WO₃ Nanorod Heterojunction for Sub‐ppm Level Detection of NO_x

Manoharan,

Govindharaj,

Muthumalai

et al. 2023

Adv Eng Mater

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In this work, we developed and optimized a cobalt oxide/tungsten oxide (Co3O4/WO3) p‐n heterojunction for NOx detection. Field emission scanning electron microscopy showed that the WO3 nanorods were embellished with Co3O4 nanostructure. X‐ray photoelectron spectroscopy revealed the presence of oxygen vacancy on the Co3O4 coupled with WO3 heterojunction. Compared to bare WO3 and pure Co3O4, the Co3O4/WO3 heterojunction sensor showed significant sensitivity to NOx at 200oC. The sensor exhibited higher linearity from 0.4 to 10 ppm of NOx, with a sensing response of 4.4% to 93%. The NOx sensitivity of the Co3O4/WO3 heterojunction sensor was 9‐fold higher than that of the pure WO3 sensor. Even at a high humidity (84%) environment, the Co3O4/WO3 heterojunction sensor demonstrated high NOx sensitivity. The sensor maintained remarkable stability measured for up to 4 weeks. We additionally discussed the possible NOx sensing mechanism of the Co3O4/WO3 heterojunction.This article is protected by copyright. All rights reserved.

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Section: Introductionmentioning

confidence: 99%

Interface Oxygen Vacancy‐Enhanced Co₃O₄/WO₃ Nanorod Heterojunction for Sub‐ppm Level Detection of NO_x

Manoharan,

Govindharaj,

Muthumalai

et al. 2023

Adv Eng Mater

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“…Tungsten oxide (WO 3 ) is an important transition metal oxide based on its versatile physical and chemical properties, as well as its wide applications, such as the smart windows, the photoelectrochemical (PEC) water splitting [1], the gas sensors structures, mainly including the tetragonal, orthorhombic, monoclinic, and triclinic, which can transform reversibly into each other as a function of temperature. At the same time, the oxygen-deficient leads to the sub-stoichiometric WO x (x < 3), being generally constructed by the edge-sharing WO 6 octahedron.…”

Section: Introductionmentioning

confidence: 99%

Improvement on synaptic properties of WO_x-based memristor by doping Ti into WO_x

Liu¹,

Wang²,

Wang³

et al. 2021

J. Phys. D: Appl. Phys.

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Doping Ti into WO x is widely used to improve the performance of various WO x -based devices. However, Ti-doped WO x (Ti:WO x ) based memristors have not been investigated in depth, especially regarding their synaptic properties. In this report, Ti:WO x films are deposited by sputtering WTi alloy target in Ar + O2 atmosphere, in which the substrates are not heated, avoiding the precipitation of TiO2 phase. As-grown Ti:WO x films exhibit polymorphous crystallized structures, originating from the topological deformation of WO6 octahedron by replacing W with Ti. Furthermore, the memristor with the structure of W/Ti:WO x / indium-doped tin oxide demonstrates typical synaptic properties, including the controllable synapse weight update by adjusting the input pulse amplitude, interval, as well as the transformation from the paired-pulse facilitation to the paired-pulse depression. Moreover, the higher Ti–O band energy leads to smaller hysteresis loop areas of its current–voltage (I–V) curves, which may mean better synaptic performances, such as higher resolution. Additionally, contrary to other metal-oxide based memristors, our device conductance increases by applying positive voltage scans or a series of positive pulses on the metal electrode. Otherwise, it will decrease. With I–V fitting and the energy-band diagrams, we analyzed deep carrier transport processes, revealing a unique synaptic mechanism.

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“…WO 3 symmetry was derived from distorted ReO 3 structure: the displacement of tungsten and the WO 6 octahedron slope. 20 Several researchers in the production of WO 3 have resulted in three common crystal structures, namely monoclinic, orthorhombic, and hexagonal 16,21,22 as well as their reversibility. This different crystal phase of WO 3 has been found theoretically and experimentally.…”

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confidence: 99%

Review—Recent Development of WO₃ for Toxic Gas Sensors Applications

Bonardo¹,

Septiani²,

Amri³

et al. 2021

J. Electrochem. Soc.

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WO 3 -based gas sensors have attracted the attention of researchers around the world in creating and developing sensors that are sensitive, stable, and have excellent reproducibility against harmful gases. Various studies that have been performed since the last few years exhibited the superior potential of WO 3 in carrying out optimal chemisorption of oxidizing and reducing gas molecules. The additional materials such as metal, metal oxide, and carbon nanomaterial can significantly widen the active state area of the WO 3 surface and other facts in various studies illustrate that the addition of polymers will change the characteristics of the semiconductor sensor. This review provides a comprehensive review of the development and modification of WO 3 for enhancing toxic gas sensor performances. In addition, the discussion of the sensing mechanism, future opportunities as well as challenges will be addressed thereby can inspire research progress on WO 3 -based toxic gas detection sensors.

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IDE embedded tungsten trioxide gas sensor for sensitive NO2 detection

Cited by 22 publications

References 40 publications

Interface Oxygen Vacancy‐Enhanced Co₃O₄/WO₃ Nanorod Heterojunction for Sub‐ppm Level Detection of NO_x

Interface Oxygen Vacancy‐Enhanced Co₃O₄/WO₃ Nanorod Heterojunction for Sub‐ppm Level Detection of NO_x

Improvement on synaptic properties of WO_x-based memristor by doping Ti into WO_x

Review—Recent Development of WO₃ for Toxic Gas Sensors Applications

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IDE embedded tungsten trioxide gas sensor for sensitive NO2 detection

Cited by 22 publications

References 40 publications

Interface Oxygen Vacancy‐Enhanced Co3O4/WO3 Nanorod Heterojunction for Sub‐ppm Level Detection of NOx

Interface Oxygen Vacancy‐Enhanced Co3O4/WO3 Nanorod Heterojunction for Sub‐ppm Level Detection of NOx

Improvement on synaptic properties of WO x -based memristor by doping Ti into WO x

Review—Recent Development of WO3 for Toxic Gas Sensors Applications

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Product

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Interface Oxygen Vacancy‐Enhanced Co₃O₄/WO₃ Nanorod Heterojunction for Sub‐ppm Level Detection of NO_x

Interface Oxygen Vacancy‐Enhanced Co₃O₄/WO₃ Nanorod Heterojunction for Sub‐ppm Level Detection of NO_x

Improvement on synaptic properties of WO_x-based memristor by doping Ti into WO_x

Review—Recent Development of WO₃ for Toxic Gas Sensors Applications