IC-100 accelerator complex for scientific and applied research

Gikal, B. N.; Дмитриев, С. Н.; Gulbekyan, G. G.; Apel, P. Yu.; Bashevoi, V.; Bogomolov, S. L.; Borisov, O. N.; Buzmakov, V. A.; Ivanenko, Ivan; Іванов, О. М.; Kazarinov, N. Yu.; Kolesov, I. V.; Миронов, В. И.; Papash, A.; Pashchenko, S. V.; Skuratov, V. A.; Tikhomirov, A. V.; Khabarov, M. V.; Cherevatenko, A.P.; Yazvitskii, N. Yu.

doi:10.1134/s1547477108010068

Cited by 12 publications

(7 citation statements)

References 3 publications

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“…Graphene was irradiated by 160 MeV xenon ions with fluences of 10 8 , 10 9 and 10 11 cm -2 at the IC100 cyclotron at the FLNR JINR in Dubna [10]. Ion beam homogeneity over the irradiated sample surface was controlled using beam scanning in the horizontal and vertical directions and was better than 5%.…”

Section: Methodsmentioning

confidence: 99%

Defect formation in supported graphene irradiated by accelerated xenon ions

Kolesov

Тиванов

Королик

et al. 2017

J Mater Sci: Mater Electron

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Raman spectroscopy and Monte-Carlo simulation studies for supported graphene irradiated by 160 MeV Xe ions are presented. Changes in the density and dominating types of defects with increasing fluence were observed. In order to analyze contribution of defect formation mechanisms, in which the substrate is involved, a comparative study was performed for graphene on SiO 2 /Si, copper and glass substrates. The major defining mechanisms were found to be 2 atomic recoils and formation of defects induced by hot electrons. For graphene on copper, the impact of substrate recoil atoms was found to be greater comparing to graphene on silicon oxide and glass, where the recoils participated approximately equally. Moreover, a possibility of defect formation in graphene due to hot electrons generated in the substrate near the interface was noted. Finally, a linear dependence of air-induced doping on D and G peak intensity ratio that represents defect density in graphene was found. The study is useful for solving the longstanding controversy on major mechanisms of defect formation in irradiated graphene, as well as for graphene-based nanoelectronic device engineering.

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Section: Methodsmentioning

confidence: 99%

Defect formation in supported graphene irradiated by accelerated xenon ions

Kolesov

Тиванов

Королик

et al. 2017

J Mater Sci: Mater Electron

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“…In principle, this phenomenon could be caused by fluctuations of the ion beam. Strictly speaking, the IC-100 beam is not continuous and consists of bunches of ions with a pulse repetition frequency of 5 MHz [10]. Therefore, the system operates with thousands of pulses per irradiation spot.…”

Section: Resultsmentioning

confidence: 99%

“…The irradiation of polymer foils was performed in a vacuum chamber at the beam line of the IC100 cyclotron (FLNR JINR) [10]. The vacuum chamber includes a web transport mechanism to rewind a polymer foil, typically 300-320 mm wide, and pull it across the ion beam [11].…”

Section: Irradiationmentioning

confidence: 99%

Production of multi-, oligo- and single-pore membranes using a continuous ion beam

Apel

Іванов

Лизунов

et al. 2015

Nuclear Instruments and Methods in Physics Research Section B:

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“…Irradiation with 167MeV Xe ions was carried out at room temperature to fluences in the range 1.0×10 10 -8.15×10 14 cm -2 at the IC-100 FLNR, JINR cyclotron [17]. After getting of definite fluence, the specimen was taken out from the irradiation module and one fourths of it was screened by a thick copper tape.…”

Section: Methodsmentioning

confidence: 99%