<i>X</i>-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation

Fang, Wenrao; Huang, Wenzhu; Huang, Wenhui; Li, Jiawei; Fu, Chao; Wang, Lulu; He, Tianwei; Cao, Yu

doi:10.1109/lmwc.2020.3013146

Cited by 11 publications

(3 citation statements)

References 8 publications

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“…In summary, the design of matching power amplifiers is a good entry point based on the existing networking nodes or network protocols. Currently, research on power amplifiers focuses on output power [38][39], linearity [40][41], efficiency [42][43], and wide bandwidth [44][45]. Most of the power amplifiers in the market are single amplified transmissions, with the focus limited to low-noise amplifiers or power amplifiers, i.e., the open-loop effect [46][47], mainly for 802.11.b/g/n protocols [48].…”

Section: Introductionmentioning

confidence: 99%

Power Amplifier Design for 25.1 km Long-Distance Transmission Under 214 km/h High-Speed Movement of Air-to-Ground Wireless Self-Assembled Network Nodes

2023

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In this paper, we design a power amplifier for this network protocol to combat the Doppler effect caused by the high-speed movement of network nodes and the rapid signal fading failure caused by the long-distance transmission of network nodes, and to extend the communication distance between network nodes, to realize the long-distance transmission under the high-speed movement of network nodes. The overall design of the power amplifier for bi-directional transmission structure, power amplifier transmitter, and low-noise amplifier receiver is used in a four-stage cascade current series negative feedback structure mode, where the signal transmitter selected RFPA5208 and MAX4003 chip, the signal receiver selected TQP3M9037 and SKY16602 chip. The above overall design enables the self-assembled nodes to ensure stable topology and achieve long-spacing transmission even in the high-speed mobile state. The test results show that the output power is 41.5dBm-44.3dBm, the gain is 44dB-45dB, and the noise is 1.6dB when the frequency band range is 2.4GHz-2.5GHz. The experimental results show that when the self-assembling nodes maintain the relative speed of 214km/h, the longest transmission distance of the point-to-point of the amorphous flat terrestrial wireless self-assembling network reaches 16300m, and the longest transmission distance of the point-to-point of the amorphous flat air-to-ground wireless self-assembling network reaches 25100m. The power amplifier designed in this paper has good application value. It provides an individual research basis for future research on the framework of a low-altitude economic fly-by-wire network.INDEX TERMS Amorphous Flat. Air-to-ground Wireless Ad-Hoc Network System. 4G/5G Bidirectional Power Amplifier. Long-Distance Transmission of Nodes. Self-organizing network nodes move at high speed

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Section: Introductionmentioning

confidence: 99%

Power Amplifier Design for 25.1 km Long-Distance Transmission Under 214 km/h High-Speed Movement of Air-to-Ground Wireless Self-Assembled Network Nodes

2023

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“…Tere are many methods to generate the microwave signal. As stated in references [5][6][7], the solid state semiconductor device was used to generate the microwave signal with low power. Te electronic vacuum devices are mainly adopted to generate the HPM signal with the narrow pulse of nanosecond level and peak power of GW level [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Study on Gain Regularity of High Power Microwave Obtained by Using Path Encoding Pulse Compression

Fang

Zhai

et al. 2023

Laser Part. Beams

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This study is the further research of the path encoding pulse compression technique. In this study, the regularity of pulse compression gain is studied by adopting the numerical simulation and experiment measurement methods. For the lossless cavity, the power gain has the characteristic of equal pulse length with equal compression gain contribution according to the numerical simulation results. It means that the pulse compression gain is increased linearly along with the time length of the input pulse. The obtained pulse power gains are equal for the two subpulses intercepted arbitrarily form the input pulse with equal time length for the pulse compression. For the lossy cavity, the power gain usually does not increase significantly after the length of input pulse reaches to a certain value. The gain contribution decreases gradually along with the increase of time length of input pulse until the growth rate of gain contribution equals to zero. Assuming two subpulses with equal time length were intercepted from the input pulse, the gain contribution of the earlier subpulse is lower than that of the later subpulse. The measured results verified the simulated gain contribution regularity according to the established experimental system.

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“…The microwave pulse is fully nested in the drain voltage pulse to ensure the quality of the microwave waveform when using drain bias modulation. According to the literature [8], as illustrated in Figure 1, the drain of the power amplifier will have a significant voltage overshoot, which might damage the device due to the sharp rising/falling edges of the pulse. This issue becomes worse with an increased output power.…”

Section: Introductionmentioning

confidence: 99%

Design and Implementation of Low Parasitic Inductance Bias Circuit for High-Power Pulsed Power Amplifiers

Fang

Ren

et al. 2023

Electronics

Self Cite

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This article presents a wideband bias circuit with low parasitic inductance for high-power pulsed amplifiers. The proposed bias circuit works similarly to the traditional bias circuit in that it can ensure the transmission of microwaves from the power amplifier to the load while preventing the transmission of microwaves from the power amplifier to the power supply. By making the bias line shorter and the transmission line wider than the traditional bias circuit, the proposed bias circuit reduces its parasitic inductance. The reduction of parasitic parameters is critical for reducing the drain voltage overshoot of the high-power pulse power amplifier and ensuring its safety. The simulation results demonstrate that the proposed bias circuit has a lower parasitic inductance and a wider bandwidth. To validate the theory and simulation results, the traditional and the proposed bias circuits are fabricated using microstrip circuits. Both the simulation and experimental results indicate that the proposed bias circuit has a one-third lower parasitic inductance than the traditional bias circuit. Furthermore, the proposed bias circuit has a wider bandwidth.

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X-Band High-Efficiency High-Power GaN Power Amplifier Based on Edge-Triggered Gate Modulation

Cited by 11 publications

References 8 publications

Power Amplifier Design for 25.1 km Long-Distance Transmission Under 214 km/h High-Speed Movement of Air-to-Ground Wireless Self-Assembled Network Nodes

Power Amplifier Design for 25.1 km Long-Distance Transmission Under 214 km/h High-Speed Movement of Air-to-Ground Wireless Self-Assembled Network Nodes

Study on Gain Regularity of High Power Microwave Obtained by Using Path Encoding Pulse Compression

Design and Implementation of Low Parasitic Inductance Bias Circuit for High-Power Pulsed Power Amplifiers

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