<i>Physics of Semiconductor Laser Devices</i>

Thompson, G.H.B.; Holonyak, N.

doi:10.1063/1.2914519

Cited by 44 publications

(50 citation statements)

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“…The emission peak is centered at a frequency of 2 eV with a width of 0.25 eV. Assuming that these dyes are embedded in a high-index environment with a refractive index of 3.4, and that the resonance mode is centered at the frequency of the emission peak with a modal volume of , we calculate according to (13) and plot the values in Fig. 6.…”

Section: ) Display and Lightning Applicationsmentioning

confidence: 99%

“…For modes that are not associated with a high-resonance, the photon lifetime typically is on the order of a few femtoseconds. Electronic recombination times, on the other hand, are typically on the order of nanoseconds in semiconductor [13] and organic dyes [18]. Since the modulation speed is limited by the slower of the two processes, the electronic recombination rate, which is a sum of the total spontaneous emission rate and the nonradiative recombination rate, clearly constitutes the limiting factor.…”

Section: B Modulation Ratementioning

confidence: 99%

“…The spontaneous and absorption spectra of GaAs at room temperature are taken from [13], and plotted in Fig. 2.…”

Section: ) Display and Lightning Applicationsmentioning

confidence: 99%

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Rate-equation analysis of output efficiency and modulation rate of photonic-crystal light-emitting diodes

Fan

Villeneuve

Joannopoulos

2000

IEEE J. Quantum Electron.

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Abstract-The performance characteristics of photonic-crystal light-emitting diodes (LEDs) are analyzed, taking into account the effects of both nonradiative recombination and photon reabsorption processes using multimode rate equations. It is shown that, in the presence of strong photon reabsorption, the optimum output efficiency and modulation rates are achieved when the width of the photon density-of-state distribution function is comparable to the width of the spontaneous emission lineshape of the active material. On the other hand, when photon reabsorption is weak, it becomes beneficial to construct high-Q cavities. Based on this analysis, the characteristics of different photonic-crystal LED configurations are discussed.

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Section: ) Display and Lightning Applicationsmentioning

confidence: 99%

Section: B Modulation Ratementioning

confidence: 99%

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Rate-equation analysis of output efficiency and modulation rate of photonic-crystal light-emitting diodes

Fan

Villeneuve

Joannopoulos

2000

IEEE J. Quantum Electron.

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“…A large variety of systems can serve as optically active medium. This includes natural atoms or semiconductor devices [3], but further systems have been proposed and studied experimentally. These include strongly coupled single or few Josephson qubits [4][5][6][7] and semiconductor quantum dot systems [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Superconducting quantum metamaterials as an active lasing medium: Effects of disorder

2016

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A metamaterial formed by superconducting circuits or quantum dots can serve as active lasing medium when coupled to a microwave resonator. For these artificial atoms, in contrast to real atoms, variations in their parameters cannot be avoided. In this paper, we examine the influence of disorder on such a multi-atom lasing setup. We find that the lasing process evolves into a selforganized stationary state that is quite robust against disorder. The reason is that photons created by those atoms which are in or close to resonance with the resonator stimulate the emission also of more detuned atoms. Not only the number of photons grows with the number of atoms, but also the width of the resonance as function of the detuning. Similar properties are found for other types of disorder such as variations in the individual coupling. We present relations how the allowed disorder scales with the number of atoms and confirm it by a numerical analysis. We also provide estimates for the sample-to-sample variations to be expected for setups with moderate numbers of atoms.

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“…In this paper we will review existing and proposed light emitting devices based on AlGaAs laser technology [1]. These devices include the semiconductor injection lasers themselves, their monolithic integration with electronic driving circuitry, laser arrays and electronically beam steerable lasers and laser arrays.…”

Section: Introductionmentioning

confidence: 99%

Semiconductor optoelectronic devices for free-space optical communications

Katz

1983

IEEE Commun. Mag.

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Light emitting devices based on AlGaAs lasers are very useful radiation sources in free space optical communications systems. After a brief review of the properties of individual injection lasers, more complex devices are described. These include, or are relevant to, monolithic integration configurations of the lasers with their electronic driving circuitry, power combining methods of semiconductor lasers, and electronic methods of steering the radiation patterns of semiconductor lasers and laser arrays. Fabrication of such devices is one of the major prerequisites for realizing the full potential advantages of free space optical communications.

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Physics of Semiconductor Laser Devices

Cited by 44 publications

References 0 publications

Rate-equation analysis of output efficiency and modulation rate of photonic-crystal light-emitting diodes

Rate-equation analysis of output efficiency and modulation rate of photonic-crystal light-emitting diodes

Superconducting quantum metamaterials as an active lasing medium: Effects of disorder

Semiconductor optoelectronic devices for free-space optical communications

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