p-type conduction in Mg-doped Ga0.91In0.09N grown by metalorganic vapor-phase epitaxy

Abstract

p-type conduction in InN-containing nitrides doped with Mg has been achieved by metalorganic vapor-phase epitaxy. The hole concentration at room temperature is as high as 7×1017 cm−3. The activation energy of a Mg acceptor is estimated to be 204 meV. D–A pair emission with peak wavelength of about 405 nm is enhanced by thermal annealing.

Key inventions in the history of nitride-based blue LED and LD

“…5. We achieved p-type AlGaN in 1991 [25] and ptype GaInN in 1995 [26] in the same manner. In 1992, ptype GaN was also produced by thermal annealing of Mgdoped GaN grown with the LT-GaN buffer layer by Nakamura et al [27].…”

Phonon-assisted deep level luminescence in heavily Mg-doped InGaN

“…It is interesting to note that, although the green luminescence can be regarded as the redshift of the blue luminescence in GaN:Mg upon indium alloying (both bands were attributed to DAP transition between V N donors and Mg Ga acceptors), 6,9,17 the LO phonon-related fine structure is not observed in GaN:Mg. 17 As discussed in the Background section, the strength of phonon replicas is related to the degree of carrier localization. Consequently, the observation of sharp phonon replicas in InGaN:Mg, not observed in GaN:Mg, indicates much stronger carrier localization in InGaN:Mg than in GaN:Mg.…”

“…5 To form p-type material, Mg is used as a dopant. 3,[6][7][8] However, little is known about the defect complexes in Mg-doped InGaN. 6,8,9 Previously, donoracceptor pair (DAP) formation has been observed in InGaN:Mg by photoluminescence (PL) spectroscopy: 6 a broad emission band is observed at 2.48 eV for In 0.09 Ga 0.91 N:Mg.…”

“…It has previously been attributed to DAP recombinations between V N donors and substitutional Mg acceptors (Mg Ga ). 6,9 In this paper, PL properties of the green emission band in annealed In 0.07 Ga 0.93 N:Mg are examined. A well-resolved fine structure with as many as five satellite peaks is observed and attributed to phonon-assisted recombination, characterized by a Huang-Rhys parameter S ϭ 6.5 and a phonon energy of 105 meV.…”

Control of p-type conduction in a-plane Ga1−xInxN (0<x<0.10) grown on r-plane sapphire substrate by metalorganic vapor-phase epitaxy

“…In nonpolar a-plane Mg-doped GaN, the activation energy of Mg acceptors with an Mg concentration of 4.0 Â 10 19 cm À3 was found to be 118 meV [8], which is lower than that of c-plane GaN having the same Mg concentration. High hole concentration p-type Ga 1Àx In x N is necessary for the realization of high-performance green emitters, particularly green LDs [9][10][11]. A hole concentration of as high as 7.8 Â 10 18 cm À3 with an InN molar fraction of 0.20 was successively achieved in c-plane GaInN [9].…”