<i>o</i>-Phenylenediamine Doped Tin-Based Two-Dimensional Perovskite for Light-Emitting Device Applications

Zhang, Yongqi; Cheng, Hongrui; Chen, Xin; Zheng, Yuanhui

doi:10.1021/acs.jpcc.3c05145

J. Phys. Chem. C

2023

DOI: 10.1021/acs.jpcc.3c05145

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o-Phenylenediamine Doped Tin-Based Two-Dimensional Perovskite for Light-Emitting Device Applications

Yongqi Zhang,

Hongrui Cheng,

Xin Chen

et al.

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2024

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Cited by 2 publications

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Recent Advances in Optical Properties and Light‐Emitting Diode Applications for 2D Tin Halide Perovskites

Xing,

He,

Cui

et al. 2024

Advanced Optical Materials

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Lead halide perovskites are widely used and intensively studied in optoelectronic devices due to their superior properties. However, the toxicity of Pb hinders the industrialization of perovskite optoelectronic devices. Sn has a similar electronic structure to Pb, thus has been widely studied as an alternative to Pb‐based perovskite optoelectronics in recent years. In this review, the research progress in luminescent properties and synthesis methods of 2D tin halide perovskites are summarized. It is also highlight a unique dual emission phenomenon in 2D tin halide perovskites and summarize several types of possible luminous mechanisms. At last, the recent development of 2D tin halide perovskites based light‐emitting diodes are also overviewed, and the challenges of oxidative inhibition and efficiency improvement in 2D tin halide perovskites are discussed. This review is expected to provide a comprehensive perspective on luminescent properties and light‐emitting diode applications of 2D tin halide perovskites.

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Recent Advances in Optical Properties and Light‐Emitting Diode Applications for 2D Tin Halide Perovskites

Xing,

He,

Cui

et al. 2024

Advanced Optical Materials

View full text Add to dashboard Cite

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Self–Trapped Exciton versus Band–Edge Electron Transitions: Insights of the Factors Affecting the Optical Properties of Lead–Free Sn–Halide Perovskites

Gualdrón‐Reyes

2024

Advanced Optical Materials

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Lead–free Sn–halide perovskites (Sn–HPs) are attractive photomaterials due to their lower toxicity, and some of them with higher stability against moisture and water, compared to their Pb‐based analogous. Interestingly, Sn‐HPs can exhibit two types of optical characteristics: the first scenario is known as band‐edge electron transitions [or band‐to‐band (b‐b) emission], where accumulated electrons in the conduction band recombine with holes in the valence band, providing a close separation between the absorption edge/photoluminescence (PL) peak (small Stokes shift). The second scenario is denominated as self‐trapped exciton (STE), where intraband gap energy states are formed to trap photocarriers generated in the perovskite, producing a broadband PL and a large Stokes shift. These optical features have been suitable for developing prominent devices, but there is no consolidated explanation about the key factors influencing the emergence of b–b emission or STE in Sn‐HPs, mainly the presence of these PL mechanisms in a particular perovskite system. This review highlights how the chemical composition, structural defects, and synthetic procedures are pivotal to producing Sn‐HPs with specific b–b or STE features. This will allow the preparation of Sn‐HPs with better quality/stability, and facile modulation of their PL properties, expanding their future applicability in LCD technologies.

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o-Phenylenediamine Doped Tin-Based Two-Dimensional Perovskite for Light-Emitting Device Applications

Cited by 2 publications

References 46 publications

Recent Advances in Optical Properties and Light‐Emitting Diode Applications for 2D Tin Halide Perovskites

Recent Advances in Optical Properties and Light‐Emitting Diode Applications for 2D Tin Halide Perovskites

Self–Trapped Exciton versus Band–Edge Electron Transitions: Insights of the Factors Affecting the Optical Properties of Lead–Free Sn–Halide Perovskites

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